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参数资料
| 型号： | 933910440112 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.9 A, 200 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 14/19页 |
| 文件大小： | 137K |
| 代理商： | 933910440112 |
1997 Nov 24
4
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYV28 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.20
For more information please refer to the
“General Part of associated Handbook”.
Cd
diode capacitance
f = 1 MHz; VR =0;
see Figs 17, 18 and 19
BYV28-50 to 200
190
pF
BYV28-300 and 400
150
pF
BYV28-500 and 600
125
pF
maximum slope of reverse
recovery current
when switched from
IF =1AtoVR ≥ 30 V and
dIF/dt = 1A/s; see Fig.21
4A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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