- 您现在的位置：买卖IC网 > PDF目录24678 > 934000180115 (NXP SEMICONDUCTORS) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 934000180115 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-73, 4 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 49K |
| 代理商： | 934000180115 |
1995 Sep 12
2
Philips Semiconductors
Product specication
PNP 5 GHz wideband transistor
BFG31
FEATURES
High output voltage capability
High gain bandwidth product
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
page
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts = 135 °C ; note 1
1W
hFE
DC current gain
IC = 70 mA; VCE = 10 V;
Tamb =25 °C
25
fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
5.0
GHz
GUM
maximum unilateral power
gain
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb =25 °C
12
dB
Vo
output voltage
IC = 100 mA; VCE = 10 V;
RL =75 ; Tamb = 25 °C
600
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
3V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts = 135 °C; note 1
1W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 934000490135 | 225 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 934000490115 | 225 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 0579196802 | 1.25 mm2, BRASS, TIN FINISH, WIRE TERMINAL |
| 934000510115 | 225 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 934000520115 | 10 ohm, Si, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 9340002-301 | 功能描述:热电模块 MS2,107,10,10,12,12, 11,W2 22.6x22.6x6.25 RoHS:否 制造商:Laird Technologies / Thermal Solutions 类型:Ceramic Plate Q最大:24 W ΔT最大:+ 63 C 最大电流:2.8 A 最大电压:14.4 V 长度:30 mm 宽度:30 mm 高度:3.2 mm |
| 9340002-302 | 制造商:Laird Technologies Inc 功能描述:MS2,107,10,10,12,12,11,RT,W8 |
| 9340002-304 | 制造商:LAIRD TECHNOLOGIES - ENGINEERED THERMAL SOLUTIONS 功能描述:PELTIR MS2,107,10,10,12,12,00,W8 制造商:Laird Technologies Inc 功能描述:PELTIR MS2,107,10,10,12,12,00,W8 |
| 9340003-301 | 功能描述:热电模块 MS2 190 10 10 12 12 11 W2 30x30x6.5mm RoHS:否 制造商:Laird Technologies / Thermal Solutions 类型:Ceramic Plate Q最大:24 W ΔT最大:+ 63 C 最大电流:2.8 A 最大电压:14.4 V 长度:30 mm 宽度:30 mm 高度:3.2 mm |
| 9340003-302 | 功能描述:MS2,190,10,10,12,12,11,RT,W8 制造商:laird technologies - engineered thermal solutions 系列:多级 零件状态:有效 外形尺寸 L x W x H:30.00mm x 30.00mm x 6.50mm 不同 Th 时的 Qmax:16.4W @ 25°C 不同 Th 时的 Delta Tmax:87°C @ 25°C 电流 - 最大值:2.9A 电压 - 最大值:15.6V 电阻（欧姆）:- 工作温度:80°C 特性:密封 - 硅树脂 RTV 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。