- 您现在的位置：买卖IC网 > PDF目录24678 > 934000180115 (NXP SEMICONDUCTORS) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 934000180115 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-73, 4 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 49K |
| 代理商： | 934000180115 |
1995 Sep 12
3
Philips Semiconductors
Product specication
PNP 5 GHz wideband transistor
BFG31
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim = 60 dB; IC = 70 mA; VCE = 10 V; RL =75 ; Tamb =25 °C;
Vp =Vo at dim = 60 dB; fp = 850.25 MHz;
Vq =Vo 6 dB; fq = 858.25 MHz;
Vr =Vo 6 dB;fr = 860.25 MHz;
measured at f(p+qr) = 848.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL =75 ; Tamb =25 °C;
Vp =Vo = at dim = 60 dB; fp = 445.25 MHz;
Vq =Vo 6 dB; fq = 453.25 MHz;
Vr =Vo 6 dB; fr = 455.25 MHz;
measured at f(p+qr) = 443.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 135 °C; note 1
40 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 10 mA
20
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
18
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
3
V
ICBO
collector cut-off current
IE = 0; VCB = 10 V
1
A
hFE
DC current gain
IC = 70 mA; VCE = 10 V;
Tamb =25 °C
25
Ccb
collector-base capacitance
IC = 0; VCB = 10 V; f = 1 MHz;
1.8
pF
Ceb
emitter-base capacitance
IC = 0; VEB = 10 V; f = 1 MHz
5
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz;
Tamb =25 °C
1.6
pF
fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
5
GHz
GUM
maximum unilateral power gain; note 1
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
16
dB
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb =25 °C
12
dB
Vo
output voltage
note 2
600
mV
Vo
output voltage
note 3
550
mV
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
相关PDF资料 |
PDF描述 |
|---|---|
| 934000490135 | 225 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 934000490115 | 225 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 0579196802 | 1.25 mm2, BRASS, TIN FINISH, WIRE TERMINAL |
| 934000510115 | 225 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 934000520115 | 10 ohm, Si, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 9340002-301 | 功能描述:热电模块 MS2,107,10,10,12,12, 11,W2 22.6x22.6x6.25 RoHS:否 制造商:Laird Technologies / Thermal Solutions 类型:Ceramic Plate Q最大:24 W ΔT最大:+ 63 C 最大电流:2.8 A 最大电压:14.4 V 长度:30 mm 宽度:30 mm 高度:3.2 mm |
| 9340002-302 | 制造商:Laird Technologies Inc 功能描述:MS2,107,10,10,12,12,11,RT,W8 |
| 9340002-304 | 制造商:LAIRD TECHNOLOGIES - ENGINEERED THERMAL SOLUTIONS 功能描述:PELTIR MS2,107,10,10,12,12,00,W8 制造商:Laird Technologies Inc 功能描述:PELTIR MS2,107,10,10,12,12,00,W8 |
| 9340003-301 | 功能描述:热电模块 MS2 190 10 10 12 12 11 W2 30x30x6.5mm RoHS:否 制造商:Laird Technologies / Thermal Solutions 类型:Ceramic Plate Q最大:24 W ΔT最大:+ 63 C 最大电流:2.8 A 最大电压:14.4 V 长度:30 mm 宽度:30 mm 高度:3.2 mm |
| 9340003-302 | 功能描述:MS2,190,10,10,12,12,11,RT,W8 制造商:laird technologies - engineered thermal solutions 系列:多级 零件状态:有效 外形尺寸 L x W x H:30.00mm x 30.00mm x 6.50mm 不同 Th 时的 Qmax:16.4W @ 25°C 不同 Th 时的 Delta Tmax:87°C @ 25°C 电流 - 最大值:2.9A 电压 - 最大值:15.6V 电阻（欧姆）:- 工作温度:80°C 特性:密封 - 硅树脂 RTV 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。