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参数资料
| 型号： | 934055646127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 2/9页 |
| 文件大小： | 85K |
| 代理商： | 934055646127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7514-55
Standard level FET
STATIC CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2
3.0
4.0
V
T
j = 175C
1
-
V
T
j = -55C
-
4.4
V
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
T
j = 175C
-
500
A
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
0.02
1
A
T
j = 175C
-
20
A
±V
(BR)GSS
Gate-source breakdown
I
G = ±1 mA;
16
-
V
voltage
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
12
14
m
resistance
T
j = 175C
-
30
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 25 A
8
39
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
2200
2900
pF
C
oss
Output capacitance
-
500
600
pF
C
rss
Feedback capacitance
-
200
270
pF
t
d on
Turn-on delay time
V
DD = 30 V; ID = 25 A;
-
18
26
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 10
-
3585ns
t
d off
Turn-off delay time
Resistive load
-
45
60
ns
t
f
Turn-off fall time
-
30
45
ns
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
68
A
current
I
DRM
Pulsed reverse drain current
-
240
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.95
1.2
V
I
F = 65 A; VGS = 0 V
-
1.0
-
V
t
rr
Reverse recovery time
I
F = 65 A; -dIF/dt = 100 A/s;
-
57
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.14
-
C
April 1998
2
Rev 1.000
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| 934055647118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 934055649118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 05W7 | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-11 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
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| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
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