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参数资料
| 型号： | 934055646127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 5/9页 |
| 文件大小： | 85K |
| 代理商： | 934055646127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7514-55
Standard level FET
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 50 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 75 A
Fig.16. Avalanche energy test circuit.
01
23
45
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
0.01
0.1
1
10
100
0
5
1
1.5
2
2.5
3
3.5
4
Thousands
(pF)
VDS/V
Ciss
Coss
Crss
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
1020
30405060
0
2
4
6
8
10
12
VGS/V
VDS = 14V
VDS = 44V
QG/nC
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS = 0.5 LID
2
BV
DSS/(BVDSS VDD)
April 1998
5
Rev 1.000
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| 934055647118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934045240118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934055648127 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934055649118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 05W7 | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-11 |
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