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| 型号： | A1351KKTTN-T |
| 元件分类： | 磁阻传感器 |
| 英文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, 0.20-4.80V, RECTANGULAR, THROUGH HOLE MOUNT |
| 封装： | LEAD FREE, PLASTIC, SIP-4 |
| 文件页数： | 15/23页 |
| 文件大小： | 654K |
| 代理商： | A1351KKTTN-T |
A1351
High Precision Linear Hall Effect Sensor IC
with a Push/Pull, Pulse Width Modulated Output
22
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
The flux density measured by the A1351 SIP is related to the
size of the gap cut into the core. The larger the gap in the core,
the smaller the flux density per ampere of applied current (see
figure 8).
Figure 9 depicts the magnetic flux density through the center of
the SIP as a function of SIP to core alignment. Note that a core
with a larger cross-sectional area would reduce the attenuation
in flux density that results from any SIP misalignment. The flat
portion of the curve in figure 9 would span a larger distance in
millimeters if the cross-sectional area of the core were increased.
Wire
+B
mm
–2
2
0
Ring concentrator
Magnetic flux in gap
Measurement plane
(midplane of gap)
Figure 9. Side view of example current-conducting wire and split ring concentrator (left), and
magnetic prole (right) through the midplane of the gap in the split ring concentrator. The ux
denisty through the center of the gap varies between the inside and the outside of the gap.
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
–2.0
Radial Displacement from Concentrator Centerline (mm)
Interior side of
Concentrator
Exterior side of
Concentrator
Magnetic
Flux
Intensity
,B
(G)
–1.0
1.0
2.0
0
Figure 8. The flux density per ampere measured by the A1351 Hall device
is related to the core gap, as shown. This figure assumes that the current
sensing application is constructed using the example setup.
Flux Density per Ampere vs. Gap for a Feedthrough Sensor
0
2
4
6
8
10
12
14
0.5
1
1.5
2
2.5
3
3.5
Gap (mm)
G
/A
a
tt
h
e
G
a
p
Ce
n
te
r
相关PDF资料 |
PDF描述 |
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| A1354KKTTN-T | MAGNETIC FIELD SENSOR-HALL EFFECT, RECTANGULAR, THROUGH HOLE MOUNT |
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| A1381LLHLT-T | MAGNETIC FIELD SENSOR-HALL EFFECT, 4.35-4.65V, RECTANGULAR, SURFACE MOUNT |
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| A1383EUA-T | MAGNETIC FIELD SENSOR-HALL EFFECT, 4.35-4.65V, RECTANGULAR, THROUGH HOLE MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A1351LKTTN-T | 功能描述:IC SENSOR HALL EFFECT 4-SIP RoHS:是 类别:传感器，转换器 >> 磁性 - 霍尔效应，数字式开关，线性，罗盘 (IC) 系列:- 标准包装:1 系列:- 传感范围:20mT ~ 80mT 类型:旋转 电源电压:4.5 V ~ 5.5 V 电流 - 电源:15mA 电流 - 输出（最大）:- 输出类型:数字式，PWM，8.5 位串行 特点:可编程 工作温度:-40°C ~ 150°C 封装/外壳:20-SSOP（0.209"，5.30mm 宽） 供应商设备封装:20-SSOP 包装:Digi-Reel® 其它名称:AS5132-HSST-500DKR |
| A1352-035 | 制造商:AVX Corporation 功能描述: |
| A1352-037 | 制造商:AVX Corporation 功能描述: |
| A13532-43N | 制造商:Harris Corporation 功能描述: |
| A1354 | 制造商:ALLEGRO 制造商全称:Allegro MicroSystems 功能描述:High Precision 2-Wire Linear Hall Effect Sensor IC with Pulse Width Modulated Output |
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