参数资料
型号: A1351KKTTN-T
元件分类: 磁阻传感器
英文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, 0.20-4.80V, RECTANGULAR, THROUGH HOLE MOUNT
封装: LEAD FREE, PLASTIC, SIP-4
文件页数: 7/23页
文件大小: 654K
代理商: A1351KKTTN-T
A1351
High Precision Linear Hall Effect Sensor IC
with a Push/Pull, Pulse Width Modulated Output
15
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Programming Pulse Requirements, protocol at TA = 25°C
Characteristic
Symbol
Notes
Min.
Typ.
Max.
Units
Programming Voltage
VP(LOW)
Measured at the PWMOUT pin.
5.5
V
VP(MID)
13
15
16
V
VP(HIGH)
26
27
28
V
Programming Current
IP
Minimum supply current required to ensure proper
fuse blowing. In addition, a minimum capacitance,
CBLOW = 0.1 μF, must be connected between the
PWMOUT and GND pins during programming, to
provide the current necessary for fuse blowing.
The blowing capacitor should be removed and the
load capacitance used for proper programming duty
cycle measurements.
300
mA
Pulse Width
tLOW
Duration of VP(LOW) voltage level for separating
VP(MID) and VP(HIGH) pulses, and delay time after the
final VBLOW pulse.
40
μs
tACTIVE
Duration of VP(MID) and VP(HIGH) pulses for register
selection or bit field addressing.
40
μs
tBLOW
Duration of VP(HIGH) pulses for fuse blowing.
40
μs
Pulse Rise Time
tPr
Rise time required for transitions from VP(LOW) to
either VP(MID) or VP(HIGH).
5
100
μs
Pulse Fall Time
tPf
Fall time required for transitions from VP(HIGH) or
VP(MID) to VP(LOW).
5
100
μs
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