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参数资料
| 型号： | A28F400BR-T |
| 厂商： | Intel Corp. |
| 英文描述： | 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引导块闪速存储器) |
| 中文描述： | 4兆位（256K × 16）引导块闪存（4兆位（256K × 16）引导块闪速存储器） |
| 文件页数： | 22/36页 |
| 文件大小： | 453K |
| 代理商： | A28F400BR-T |
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A28F400BR-T/B
22
ADVANCE INFORMATION
3.6
Power-Up Operation
The device is designed to offer protection against
accidental block erasure or programming during
power transitions. Upon power-up, the device is
indifferent as to which power supply, V
PP
or V
CC
,
powers-up first. Power supply sequencing is not
required.
A system designer must guard against spurious
programming for V
CC
voltages above V
LKO
when
V
PP
is active. Since both WE# and CE# must be
low for a command write, driving either signal to V
IH
will
inhibit writes to the device. The CUI architecture
provides an added level of protection since
alteration of memory contents can only occur after
successful completion of the two-step command
sequences. Finally, the device is disabled until RP#
is brought to V
IH
, regardless of the state of its
control inputs. By holding the device in reset (RP#
connected to system PowerGood) during power
up/down, invalid bus conditions that may occur can
be masked. This feature provides yet another level
of memory protection.
3.6.1
RP# CONNECTED TO SYSTEM
RESET
The use of RP# during system reset is important
with automated program/erase devices. When the
system comes out of reset it expects to read from
the flash memory. Automated flash memories
provide status information when accessed during
program/erase modes. If a CPU reset occurs with
no flash memory reset, proper CPU initialization
would not occur because the flash memory would
be providing the status information instead of array
data. Intel’s Flash memories allow proper CPU
initialization following a system reset through the
use of the RP# input. In this application, RP# is
controlled by the same RESET# signal that resets
the system CPU.
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require careful device decoupling methods. System
designers should consider three supply current
issues:
1.
2.
3.
Standby current levels (I
CCS
)
Active current levels (I
CCR
)
Transient peaks produced by falling and rising
edges of CE#.
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
V
TRACE ON PRINTED CIRCUIT
BOARDS
Writing to flash memories while they reside in the
target system, requires special consideration of the
V
PP
power supply trace by the printed circuit board
designer. The V
PP
pin supplies the flash memory
cells current for programming and erasing. One
should use similar trace widths and layout
considerations given to the V
CC
power supply trace.
Adequate V
PP
supply traces, and decoupling
capacitors placed adjacent to the component, will
decrease spikes and overshoots.
3.7.2
V
CC
, V
PP
AND RP# TRANSITIONS
The CUI latches commands as issued by
system
software and is not altered by V
PP
or CE#
transitions or WSM actions. Its default state upon
power-up, after exit from deep power-down mode,
or after V
CC
transitions above V
LKO
(Lockout
voltage), is read array mode.
After any word/byte program or block erase
operation is complete, and even after V
PP
transitions down to V
PPLK
, the CUI must be reset to
read array mode via the Read Array command
when accesses to the flash memory are desired.
相关PDF资料 |
PDF描述 |
|---|---|
| A28F400BX-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器) |
| A6FLR10MS02 | FAST RECOVERY DIODES |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| A28F400BR-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F400BR-T/B |
| A28F400BR-TB | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T/B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:A28F400BX-T/B |
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