参数资料
型号: A29001SERIES
英文描述: 128K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory
中文描述: 128K的× 8位CMOS 5.0伏特只。引导扇区闪存
文件页数: 5/32页
文件大小: 316K
代理商: A29001SERIES
A29001/A290011 Series
PRELIMINARY (December, 2002, Version 0.4)
5
AMIC Technology, Corp.
To read array data from the outputs, the system must drive
the
CE
and
OE
pins to V
IL
.
CE
is the power control and
selects the device.
OE
is the output control and gates
array data to the output pins.
WE
should remain at V
IH
all
the time during read operation. The internal state machine
is set for reading array data upon device power-up, or after
a hardware reset. This ensures that no spurious alteration
of the memory content occurs during the power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data
on the device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing
waveforms, l
CC1
in the DC Characteristics table represents
the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive
WE
and
CE
to
V
IL
, and
OE
to V
IH
. An erase operation can erase one
sector, multiple sectors, or the entire device. The Sector
Address Tables indicate the address range that each sector
occupies. A "sector address" consists of the address inputs
required to uniquely select a sector. See the "Command
Definitions" section for details on erasing a sector or the
entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can
then read autoselect codes from the internal register (which
is separate from the memory array) on I/O
7
- I/O
0
. Standard
read cycle timings apply in this mode. Refer to the
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
I
CC2
in the Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O
7
- I/O
0
. Standard read cycle timings and I
CC
read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section
for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are
placed in the high impedance state, independent of the
OE
input.
The device enters the CMOS standby mode when the
CE
&
RESET
pins (
CE
only on A290011) are both held at V
CC
±
0.5V. (Note that this is a more restricted voltage range
than V
IH
.) The device enters the TTL standby mode when
CE
is held at V
IH
, while
RESET
(Not available on
A290011) is held at VCC
±
0.5V. The device requires the
standard access time (t
CE
) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
I
CC3
in the DC Characteristics tables represents the standby
current specification.
Output Disable Mode
When the
OE
input is at V
IH
, output from the device is
disabled. The output pins are placed in the high impedance
state.
RESET
: Hardware Reset Pin (N/A on A290011)
The
RESET
pin provides a hardware method of resetting
the device to reading array data. When the system drives
the
RESET
pin low for at least a period of t
RP
, the device
immediately terminates any operation in progress, tristates
all data output pins, and ignores all read/write attempts for
the duration of the
RESET
pulse. The device also resets
the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once
the device is ready to accept another command sequence,
to ensure data integrity.
The
RESET
pin may be tied to the system reset circuitry. A
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from the
Flash memory.
Refer to the AC Characteristics tables for
RESET
parameters and diagram.
相关PDF资料
PDF描述
A290021SERIES 256K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory
A29002SERIES 256K X 8 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory
A29010SERIES 128K X 8 Bit CMOS 5.0 Volt-only. Uniform Sector Flash Memory
A29040ASERIES 512K X 8 Bit CMOS 5.0 Volt-only. Uniform Sector Flash Memory
A29040P-70 IC-4M FLASH
相关代理商/技术参数
参数描述
A29001T-55 制造商:AMICC 制造商全称:AMIC Technology 功能描述:128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
A29001T-55F 制造商:AMICC 制造商全称:AMIC Technology 功能描述:128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
A29001T-70 制造商:AMICC 制造商全称:AMIC Technology 功能描述:128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
A29001T-70F 制造商:AMICC 制造商全称:AMIC Technology 功能描述:128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
A29001T-90 制造商:AMICC 制造商全称:AMIC Technology 功能描述:128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory