- 您现在的位置：买卖IC网 > PDF目录364573 > A29400SERIES 512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory PDF资料下载
参数资料
| 型号： | A29400SERIES |
| 英文描述： | 512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
| 中文描述： | 为512k × 8位/ 256 × 16位的CMOS 5.0伏特只。引导扇区闪存 |
| 文件页数： | 28/33页 |
| 文件大小： | 331K |
| 代理商： | A29400SERIES |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页当前第28页第29页第30页第31页第32页第33页
A29400 Series
PRELIMINARY (December, 2002, Version 0.2)
28
AMIC Technology, Corp.
Timing Waveforms for Alternate
CE
Controlled Write Operation (
RESET
=V
IH
on A29400)
Addresses
WE
OE
CE
Data
555 for program
2AA for erase
PA
D
OUT
~
~
I/O
7
~
~
~
Data Polling
Note :
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O
2. Figure indicates the last two bus cycles of the command sequence.
7
= Complement of Data Input, D
OUT
= Array Data.
PD for program
30 for sector erase
10 for chip erase
~
t
BUSY
t
WHWH1 or 2
t
AH
t
AS
t
WC
t
WH
t
GHEL
t
CP
t
WS
t
CPH
PA for program
SA for sector erase
555 for chip erase
A0 for program
55 for erase
t
RH
t
DS
t
DH
~
~
RESET
RY/BY
Erase and Programming Performance
Parameter
Typ. (Note 1)
Max. (Note 2)
Unit
Comments
Sector Erase Time
Chip Erase Time
Byte Programming Time
1.0
11
35
8
sec
sec
Excludes 00h programming
prior to erasure
300
μ
s
μ
s
sec
Word Programming Time
12
500
Byte Mode
3.6
10.8
Chip Programming Time
(Note 3)
Word Mode
3.1
9.3
sec
Excludes system-level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 5.0V VCC, 10,000 cycles. Additionally,
programming typically assumes checkerboard pattern.
2. Under worst case conditions of 90
°
C, VCC = 4.5V (4.75V for -55), 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only
then does the device set I/O
5
= 1. See the section on I/O
5
for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See
Table 4 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 10,000 cycles.
相关PDF资料 |
PDF描述 |
|---|---|
| A29800SERIES | 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only. Boot Sector Flash Memory |
| A2982ELW | Octal Peripheral Driver |
| A2982SLWTR | Octal Peripheral Driver |
| A2982 | 8-CHANNEL SOURCE DRIVERS |
| A2982SLW | 8-CHANNEL SOURCE DRIVERS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A29400TM-55 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| A29400TM-70 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| A29400TM-90 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| A29400TV-55 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| A29400TV-70 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory |
发布紧急采购，3分钟左右您将得到回复。