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参数资料
| 型号： | A42L2604SERIES |
| 英文描述： | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 4米× 4的CMOS动态RAM与江户页面模式 |
| 文件页数： | 3/25页 |
| 文件大小： | 259K |
| 代理商： | A42L2604SERIES |
A42L2604 Series
PRELIMINARY
(November, 2001, Version 0.2)
2
AMIC Technology, Inc.
Selection Guide
Symbol
Description
-45
-50
Unit
t
RAC
Maximum RAS Access Time
45
50
ns
t
AA
Maximum Column Address Access Time
20
22
ns
t
CAC
Maximum CAS Access Time
12
13
ns
t
OEA
Maximum Output Enable (OE) Access Time
12
13
ns
t
RC
Minimum Read or Write Cycle Time
76
84
ns
t
PC
Minimum EDO Cycle Time
18
20
ns
Functional Description
The A42L2604 reads and writes data by multiplexing an
22-bit address into a 11-bit(2K) row and column address.
RAS
and
CAS
are used to strobe the row address and the
column address, respectively.
A Read cycle is performed by holding the WE signal high
during RAS/
CAS
operation. A Write cycle is executed by
holding the WE signal low during RAS /
CAS
operation;
the input data is latched by the falling edge of WE or
CAS
, whichever occurs later. The data inputs and outputs
are routed through 4 common I/O pins, with RAS,
CAS
,
WE and OE controlling the in direction.
EDO Page Mode operation all 2048(2K) columns within a
selected row to be randomly accessed at a high data rate.
A EDO Page Mode cycle is initiated with a row address
latched by RAS followed by a column address latched by
CAS
. While holding RAS low,
CAS
can be toggled to
strobe changing column addresses, thus achieving shorter
cycle times.
The A42L2604 offers an accelerated Fast Page Mode
cycle through a feature called Extended Data Out, which
keeps the output drivers on during the
CAS
precharge
time (t
cp
). Since data can be output after
CAS
goes high,
the user is not required to wait for valid data to appear
before starting the next access cycle. Data-out will remain
valid as long as RAS and OE are low, and WE is high;
this is the only characteristic which differentiates Extended
Data Out operation from a standard Read or Fast Page
Read.
A memory cycle is terminated by returning both RAS and
CAS
high. Memory cell data will retain its correct state by
maintaining
power
and
combinations of the 11-bit(2K) row addresses, regardless
of sequence, at least once every 32ms through any RAS
cycle (Read, Write) or RAS Refresh cycle ( RAS -only,
CBR, or Hidden). The CBR Refresh cycle automatically
controls the row addresses by invoking the refresh counter
and controller.
Power-On
The initial application of the VCC supply requires a 200 μs
wait followed by a minimum of any eight initialization cycles
containing a RAS clock. During Power-On, the VCC
current is dependent on the input levels of RAS and
CAS
.
It is recommended that RAS and
CAS
track with VCC or
be held at a valid V
IH
during Power-On to avoid current
surges.
accessing
all
2048(2K)
相关PDF资料 |
PDF描述 |
|---|---|
| A42L8316SERIES | 256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42U0616SERIES | 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42U2604SERIES | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A431AM | Requlator -＞ Shunt(Adjustable Voltage) |
| A431BM | Requlator -＞ Shunt(Adjustable Voltage) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A42L2604V-45 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42L2604V-45U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42L2604V-50 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42L2604V-50U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42L8316 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
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