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参数资料
| 型号： | A42L2604SERIES |
| 英文描述： | 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 4米× 4的CMOS动态RAM与江户页面模式 |
| 文件页数： | 7/25页 |
| 文件大小： | 259K |
| 代理商： | A42L2604SERIES |
A42L2604 Series
PRELIMINARY
(November, 2001, Version 0.2)
6
AMIC Technology, Inc.
AC Characteristics
(VCC = 3.3V
±
10%, VSS = 0V, Ta = 0
°
C to +70
°
C or -40
°
C to +85
°
C)
Test Conditions:
Input timing reference level: V
IH
/V
IL
=2.0V/0.8V
Output reference level: V
OH
/V
OL
=2.0V/0.8V
Output Load: 2TTL gate + CL (50pF)
Assumed t
T
=2ns
-45
-50
#
Std
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
Notes
t
T
Transition Time (Rise or Fall)
1
50
1
50
ns
4, 5
1
t
RC
Random Read or Write Cycle Time
76
-
84
-
ns
2
t
RP
RAS Precharge Time
27
-
30
-
ns
3
t
RAS
RAS Pulse Width
45
10K
50
10K
ns
4
t
CAS
CAS Pulse Width
7
10K
8
10K
ns
5
t
RCD
RAS to CASDelay Time
10
33
11
37
ns
6
6
t
RAD
RAS to Column Address Delay Time
8
25
9
28
ns
7
7
t
RSH
CAS to RAS Hold Time
7
-
8
-
ns
8
t
CSH
CAS Hold Time
35
-
37
-
ns
9
t
CRP
CAS to RAS Precharge Time
5
-
5
-
ns
10
t
ASR
Row Address Setup Time
0
-
0
-
ns
11
t
RAH
Row Address Hold Time
7
-
8
-
ns
12
t
CLZ
CAS to Output in Low Z
3
-
3
-
ns
8
13
t
RAC
Access Time from RAS
-
45
-
50
ns
6,7
14
t
CAC
Access Time from CAS
-
12
-
13
ns
6, 12
15
t
AA
Access Time from Column Address
-
20
-
22
ns
7, 12
16
t
OEA
Access Time from OE
-
12
-
13
ns
17
t
AR
Column Address Hold Time from RAS
40
-
45
-
ns
18
t
RCS
Read Command Setup Time
0
-
0
-
ns
19
t
RCH
Read Command Hold Time
0
-
0
-
ns
9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| A42L2604V-45 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42L2604V-45U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42L2604V-50 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42L2604V-50U | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
| A42L8316 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE |
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