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参数资料
| 型号： | ACT-S128K32C-020P7I |
| 厂商： | Aeroflex Inc. |
| 英文描述： | High Speed 4 Megabit SRAM Multichip Module |
| 中文描述： | 4兆位的高速SRAM的多芯片模块 |
| 文件页数： | 4/10页 |
| 文件大小： | 414K |
| 代理商： | ACT-S128K32C-020P7I |
A
A
Aeroflex Circuit Technology ACT-S128K32
SCD1659 REV E 5/21/01 Plainview NY (516) 694-6700
3
Standby Current
ISB
CE = VIH, OE = VIH,
f = 5 MHz, VCC = Max,
CMOS Compatible
80
60
mA
Output Low Voltage
VOL
IOL = 8 mA, VCC = Min
0.4
V
Output High Voltage
VOH
IOH = -4.0 mA, VCC = Min
2.4
V
AC Characteristics
(VCC = 5.0V, VSS = 0V, TC = -55°C to +125°C)
Read Cycle
Parameter
Sym
–017
Min Max
–020
Min Max
–025
Min Max
–035
Min Max
–045
Min Max
–055
Min Max
Units
Read Cycle Time
tRC
17
20
25
35
45
55
ns
Address Access Time
tAA
17
20
25
35
45
55
ns
Chip Enable Access Time
tACE
17
20
25
35
45
55
ns
Output Hold from Address Change
tOH
00
ns
Output Enable to Output Valid
tOE
9
1215
2025
30
ns
Chip Enable to Output in Low Z*
tCLZ
33
ns
Output Enable to Output in Low Z*
tOLZ
00
ns
Chip Deselect to Output in High Z*
tCHZ
12
15
20
ns
Output Disable to Output in High Z*
tOHZ
10
11
12
15
20
ns
* Parameters guaranteed by design but not tested
Write Cycle
Parameter
Sym
–017
Min Max
–020
Min Max
–025
Min Max
–035
Min Max
–045
Min Max
–055
Min Max
Units
Write Cycle Time
tWC
17
20
25
35
45
55
ns
Chip Enable to End of Write
tCW
12
15
20
25
30
40
ns
Address Valid to End of Write
tAW
12
15
20
25
30
40
ns
Data Valid to End of Write
tDW
10
12
15
18
20
ns
Write Pulse Width
tWP
13
15
20
25
30
40
ns
Address Setup Time
tAS
00
ns
Output Active from End of Write *
tOW
33
34
44
ns
Write to Output in High Z *
tWHZ
10
15
ns
Data Hold from Write Time
tDH
00
ns
Address Hold Time
tAH
00
ns
* Parameters guaranteed by design but not tested
Data Retention Electrical Characteristics (Special Order Only)
(TC = -55°C to +125°C)
Parameter
Sym
Test Conditions
All Speeds
Min
Max
Units
VCC for Data Retention
VDR
CE
≥ V
CC – 0.2V
25.5
V
Data Retention Current
ICCDR1
VCC = 3V, 17-55ns
11.6
mA
DC Characteristics (Continued)
(4.5Vdc< VCC < 5.5Vdc, VSS = 0V, TC = -55°C to +125°C, Unless otherwise specified)
Parameter
Sym
Conditions
–017 & –020
Min
Max
–025 & –035
Min
Max
–045 & –055
Min
Max
Units
相关PDF资料 |
PDF描述 |
|---|---|
| ACT-S128K32C-020P7M | High Speed 4 Megabit SRAM Multichip Module |
| ACT-S128K32C-020P7T | High Speed 4 Megabit SRAM Multichip Module |
| ACT-S128K32N-020F18C | High Speed 4 Megabit SRAM Multichip Module |
| ACT-S128K32N-020F18I | High Speed 4 Megabit SRAM Multichip Module |
| ACT-S128K32N-020F18M | High Speed 4 Megabit SRAM Multichip Module |
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