参数资料
型号: ACT-S128K32C-020P7I
厂商: Aeroflex Inc.
英文描述: High Speed 4 Megabit SRAM Multichip Module
中文描述: 4兆位的高速SRAM的多芯片模块
文件页数: 5/10页
文件大小: 414K
代理商: ACT-S128K32C-020P7I
A
A
Aeroflex Circuit Technology ACT-S128K32
SCD1659 REV E 5/21/01 Plainview NY (516) 694-6700
4
Timing Diagrams
DI/O
tRC
tOH
tAA
Data Valid
Previous Data Valid
tOE
High Z
tOHZ
Read Cycle Timing Diagrams
Data Valid
tCLZ
CE
OE
tACE
tCHZ
UNDEFINED
DON’T CARE
Read Cycle 2 (WE = VIH)
Write Cycle 2 (CE Controlled, OE = VIH )
tCW
tAS
tWP
tDW
tOW
CE
WE
Data Valid
Write Cycle 1 (WE Controlled, OE = VIL)
DI/O
AC Test Circuit
IOL
Parameter
Typical
Units
Input Pulse Level
0 – 3.0
V
Input Rise and Fall
5
ns
Input and Output Timing Reference Level
1.5
V
Output Lead Capacitance
50
pF
Notes:
1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance
ZO =75
. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance
load circuit. 6) ATE Tester includes jig capacitance.
IOH
To Device Under Test
VZ ~ 1.5 V (Bipolar Supply)
Current Source
CL =
50 pF
tWC
tAW
tAH
tRC
tAA
tOLZ
SEE NOTE
Note: Guaranteed by design, but not tested.
DI/O
tDH
tWHZ
SEE NOTE
Read Cycle 1 (CE = OE = VIL, WE = VIH)
Write Cycle Timing Diagrams
tWP
tDW
Data Valid
tWC
tAW
tAH
DI/O
tDH
CE
WE
tCW
tAS
A0-16
SEE NOTE
Note: Guaranteed by design, but not tested.
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