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| 型号： | AD5111BCPZ10-RL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 19/24页 |
| 文件大小： | 0K |
| 描述： | IC DGTL POT 128POS 10K 8LFCSP |
| 标准包装： | 1 |
| 接片： | 128 |
| 电阻（欧姆）： | 10k |
| 电路数： | 1 |
| 温度系数： | 标准值 35 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | 3 线串行（芯片选择，增/减） |
| 电源电压： | 2.3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-UFDFN 裸露焊盘，CSP |
| 供应商设备封装： | 8-LFCSP-UD（2x2） |
| 包装： | 标准包装 |
| 其它名称： | AD5111BCPZ10-RL7DKR |
AD5111/AD5113/AD5115
Data Sheet
Rev.
| Page 4 of 24
Parameter
Symbol
Test Conditions/Comments
Min
Max
Unit
DYNAMIC CHARACTERISTICS3, 10
Bandwidth
BW
Code = half scale, 3 dB
RAB = 10 kΩ
2
MHz
RAB = 80 kΩ
200
kHz
Total Harmonic Distortion
THD
VA = VDD/2 + 1 V rms, VB = VDD/
2, f = 1 kHz, code = half scale
RAB = 10 kΩ
80
dB
RAB = 80 kΩ
85
dB
VW Settling Time
ts
VA = 5 V, VB = 0 V, ±0.5 LSB
error band
RAB = 10 kΩ
3
μs
RAB = 80 kΩ
12
μs
Resistor Noise Density
eN_WB
Code = half scale, TA = 25°C,
f = 100 kHz
RAB = 10 kΩ
9
nV/√Hz
RAB = 80 kΩ
20
nV/√Hz
FLASH/EE MEMORY RELIABILITY3
Endurance11
TA = 25°C
1
MCycles
100
kCycles
Data Retention12
50
Years
1 Typical values represent average readings at 25°C, VDD = 5 V, VSS = 0 V, and VLOGIC = 5 V.
2 R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step
change from ideal between successive tap positions. The maximum wiper current is limited to 0.8 × VDD/RAB.
3 Guaranteed by design and characterization; not subject to production test.
4 INL and DNL are measured at VWB with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = 0 V. DNL specification limits
of ±1 LSB maximum are guaranteed monotonic operating conditions.
5 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on current direction with respect to each other.
6 CA is measured with VW = VA = 2.5 V, CB is measured with VW = VB = 2.5 V, and CW is measured with VA = VB = 2.5 V.
7 Different from operating current; supply current for NVM program lasts approximately 30 ms.
8 Different from operating current; supply current for NVM read lasts approximately 20 μs.
9 PDISS is calculated from (IDD × VDD).
10 All dynamic characteristics use VDD = 5.5 V and VLOGIC = 5 V.
11 Endurance is qualified at 100,000 cycles per JEDEC Standard 22, Method A117 and measured at 150°C.
12 Retention lifetime equivalent at junction temperature (TJ) is 125°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV
derates with junction temperature in the Flash/EE memory.
A
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