参数资料
| 型号： | AD648JNZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP BIFET 1MHZ DUAL LP 8DIP |
| 标准包装： | 50 |
| 放大器类型： | J-FET |
| 电路数： | 2 |
| 转换速率： | 1.8 V/µs |
| 增益带宽积： | 1MHz |
| 电流 - 输入偏压： | 5pA |
| 电压 - 输入偏移： | 750µV |
| 电流 - 电源： | 340µA |
| 电流 - 输出 / 通道： | 15mA |
| 电压 - 电源，单路/双路(±)： | ±4.5 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 773 (CN2011-ZH PDF) |
AD648
REV. E
–4–
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD648 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Internal Power Dissipation
2
. . . . . . . . . . . . . . . . . . . . 500 mW
Input Voltage
3
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . +VS and –VS
Storage Temperature Range (Q, H) . . . . . . . –65
°C to +150°C
Storage Temperature Range (N, R) . . . . . . . . –65
°C to +125°C
Operating Temperature Range
AD648J/K . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
°C to 70°C
AD648A/B . . . . . . . . . . . . . . . . . . . . . . . . . . –40
°C to +85°C
AD648S/T . . . . . . . . . . . . . . . . . . . . . . . . . –55
°C to +125°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300
°C
NOTES
1Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2Thermal Characteristics:
8-Pin Plastic Package:
θ
JA = 165
°C/Watt
8-Pin CERDIP Package:
θ
JC = 22
°C/Watt; θ
JA = 110
°C/Watt
8-Pin SOIC Package:
θ
JC = 42
°C/Wat; θ
JA = 160
°C/Watt
3For supply voltages less than
± 18 V, the absolute maximum input voltage is equal
to the supply voltage.
相关PDF资料 |
PDF描述 |
|---|---|
| TSW-123-06-T-S | CONN HEADER 23POS .100" SNGL TIN |
| TSW-123-05-T-S | CONN HEADER 23POS .100" SNGL TIN |
| BK/AGC-1/32 | FUSE 1/32A 250V FAST AGC GLASS |
| 9-146282-0-21 | CONN HDR BRKWAY .100 21POS VERT |
| 4-103741-0-21 | CONN HEADR BRKWAY .100 21POS STR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AD648JNZKL1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Analog Devices 功能描述: |
| AD648JR | 制造商:Analog Devices 功能描述:OP Amp Dual GP ±18V 8-Pin SOIC N 制造商:Rochester Electronics LLC 功能描述:LOW POWER DUAL OP AMP IC - Bulk 制造商:Analog Devices 功能描述:IC OP-AMP DUAL BIFET |
| AD648JR-REEL | 制造商:Analog Devices 功能描述:OP Amp Dual GP ±18V 8-Pin SOIC N T/R |
| AD648JR-REEL7 | 制造商:Analog Devices 功能描述:OP Amp Dual GP ±18V 8-Pin SOIC N T/R |
| AD648JRZ | 功能描述:IC OPAMP BIFET 1MHZ DUAL 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 产品培训模块:Differential Circuit Design Techniques for Communication Applications 标准包装:1 系列:- 放大器类型:RF/IF 差分 电路数:1 输出类型:差分 转换速率:9800 V/µs 增益带宽积:- -3db带宽:2.9GHz 电流 - 输入偏压:3µA 电压 - 输入偏移:- 电流 - 电源:40mA 电流 - 输出 / 通道:- 电压 - 电源，单路/双路(±):3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-VQFN 裸露焊盘，CSP 供应商设备封装:16-LFCSP-VQ 包装:剪切带 (CT) 产品目录页面:551 (CN2011-ZH PDF) 其它名称:ADL5561ACPZ-R7CT |
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