参数资料
型号: AD7705BRZ-REEL7
厂商: Analog Devices Inc
文件页数: 42/44页
文件大小: 0K
描述: IC ADC 16BIT 2CHAN 16SOIC
标准包装: 1
位数: 16
采样率(每秒): 500
数据接口: DSP,MICROWIRE?,QSPI?,串行,SPI?
转换器数目: 1
功率耗散(最大): 1mW
电压电源: 单电源
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 标准包装
输入数目和类型: 2 个差分,单极;2 个差分,双极
其它名称: AD7705BRZ-REEL7DKR
AD7705/AD7706
Rev. C | Page 7 of 44
Parameter
B Version1
Unit
Conditions/Comments
POWER REQUIREMENTS
VDD Voltage
2.7 to 3.3
V min to V max
For specified performance
Power Supply Currents17
Digital I/Ps = 0 V or VDD, external MCLK IN and CLKDIS = 1
0.32
mA max
BUF bit = 0, fCLKIN = 1 MHz, gains of 1 to 128
0.6
mA max
BUF bit = 1, fCLKIN = 1 MHz, gains of 1 to 128
0.4
mA max
BUF bit = 0, fCLKIN = 2.4576 MHz, gains of 1 to 4
0.6
mA max
BUF bit = 0, fCLKIN = 2.4576 MHz, gains of 8 to 128
0.7
mA max
BUF bit = 1, fCLKIN = 2.4576 MHz, gains of 1 to 4
1.1
mA max
BUF bit = 1, fCLKIN = 2.4576 MHz, gains of 8 to 128
VDD Voltage
4.75 to 5.25
V min to V max
For specified performance
Power Supply Currents17
Digital I/Ps = 0 V or VDD, external MCLK IN and CLKDIS = 1
0.45
mA max
BUF bit = 0, fCLKIN = 1 MHz, gains of 1 to 128
0.7
mA max
BUF bit = 1, fCLKIN = 1 MHz, gains of 1 to 128
0.6
mA max
BUF bit = 0, fCLKIN = 2.4576 MHz, gains of 1 to 4
0.85
mA max
BUF bit = 0, fCLKIN = 2.4576 MHz, gains of 8 to 128
0.9
mA max
BUF bit = 1, fCLKIN = 2.4576 MHz, gains of 1 to 4
1.3
mA max
BUF bit = 1, fCLKIN = 2.4576 MHz, gains of 8 to 128
Standby (Power-Down) Current18
16
μA max
External MCLK IN = 0 V or VDD, VDD = 5 V, see Figure 12
8
μA max
External MCLK IN = 0 V or VDD, VDD = 3 V
Power Supply Rejection19, 20
dB typ
1 Temperature range is 40°C to +85°C.
2 These numbers are established from characterization or design data at initial product release.
3 A calibration is effectively a conversion; therefore, these errors are of the order of the conversion noise shown in Table 5 and Table 7. This applies after calibration at
the temperature of interest.
4 Recalibration at any temperature removes these drift errors.
5 Positive full-scale error includes zero-scale errors (unipolar offset error or bipolar zero error) and applies to both unipolar and bipolar input ranges.
6 Full-scale drift includes zero-scale drift (unipolar offset drift or bipolar zero drift) and applies to both unipolar and bipolar input ranges.
7 Gain error does not include zero-scale errors. It is calculated as (full-scale error – unipolar offset error) for unipolar ranges and (full-scale error - bipolar zero error) for
bipolar ranges.
8 Gain drift does not include unipolar offset drift or bipolar zero drift. It is effectively the drift of the part if only zero-scale calibrations are performed.
9 This common-mode voltage range is allowed, provided that the input voltage on analog inputs is not more positive than VDD + 30 mV or more negative than
GND 100 mV. Parts are functional with voltages down to GND 200 mV, but with increased leakage at high temperatures.
10 The AD7705/AD7706 can tolerate absolute analog input voltages down to GND 200 mV, but the leakage current increases.
11 The analog input voltage range on AIN(+) is given with respect to the voltage on AIN() on the AD7705, and with respect to the voltage of the COMMON input on the
AD7706. The absolute voltage on the analog inputs should not be more positive than VDD + 30 mV, or more negative than GND 100 mV for specified performance.
Input voltages of GND 200 mV can be accommodated, but with increased leakage at high temperatures.
12 VREF = REFIN(+) REFIN().
13 These logic output levels apply to the MCLK OUT only when it is loaded with one CMOS load.
14 Sample tested at 25°C to ensure compliance.
15 After calibration, if the analog input exceeds positive full scale, the converter outputs all 1s. If the analog input is less than negative full scale, the device outputs all 0s.
16 These calibration and span limits apply, provided that the absolute voltage on the analog inputs does not exceed VDD + 30 mV or go more negative than
GND
100 mV. The offset calibration limit applies to both the unipolar zero point and the bipolar zero point.
17 When using a crystal or ceramic resonator across the MCLK pins as the clock source for the device, the VDD current and power dissipation varies depending on the
crystal or resonator type (see Clocking and Oscillator Circuit section).
18 If the external master clock continues to run in standby mode, the standby current increases to 150 μA typical at 5 V and 75 μA at 3 V. When using a crystal or ceramic
resonator across the MCLK pins as the clock source for the device, the internal oscillator continues to run in standby mode, and the power dissipation depends on the
crystal or resonator type (see Standby Mode section).
19 Measured at dc and applies in the selected pass band. PSRR at 50 Hz exceeds 120 dB, with filter notches of 25 Hz or 50 Hz. PSRR at 60 Hz exceeds 120 dB, with filter
notches of 20 Hz or 60 Hz.
20 PSRR depends on both gain and VDD, as follows:
Gain
1
2
4
8 to 128
VDD = 3 V
86
78
85
93
VDD = 5 V
90
78
84
91
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