参数资料
| 型号： | AD7891ASZ-1 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 14/20页 |
| 文件大小： | 0K |
| 描述： | IC DAS 12BIT 8CH HI-SPD 44-MQFP |
| 标准包装： | 1 |
| 类型： | 数据采集系统（DAS） |
| 分辨率（位）： | 12 b |
| 采样率（每秒）： | 500k |
| 数据接口： | 串行，并联 |
| 电压电源： | 单电源 |
| 电源电压： | 5V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 44-QFP |
| 供应商设备封装： | 44-MQFP（10x10） |
| 包装： | 托盘 |
| 产品目录页面： | 776 (CN2011-ZH PDF) |
–3–
REV. D
AD7891
Parameter
A Version
1
B Version
Y Version
Unit
Test Conditions/Comments
LOGIC OUTPUTS
Output High Voltage, VOH
4.0
V min
ISOURCE = 200
mA.
Output Low Voltage, VOL
0.4
V max
ISINK = 1.6 mA.
DB11to DB0
Floating-State Leakage Current
±10
mA max
Floating-State Capacitance
5
15
pF max
Output Coding
Straight (Natural) Binary
Data format bit of control register = 0.
Twos Complement
Data format bit of control register = 1.
CONVERSION RATE
Conversion Time
1.6
ms max
Track/Hold Acquisition Time
0.6
ms max
AD7891-1 hardware conversion.
0.7
ms max
AD7891-1 software conversion.
0.4
ms max
AD7891-2.
POWER REQUIREMENTS
VDD
55
5
V nom
±5% for specified performance.
IDD
Normal Mode
20
21
mA max
Standby Mode
80
mA max
Logic inputs = 0 V or VDD.
Power Dissipation
VDD = 5 V.
Normal Mode
100
105
mW max
Typically 82 mW.
Standby Mode
400
mW max
Typically 75
mW.
NOTES
1Temperature ranges for the A and B Versions: –40
∞C to +85∞C. Temperature range for the Y Version: –55∞C to +105∞C.
2The AD7891-1’s dynamic performance (THD and SNR) and the AD7891-2’s THD are measured with an input frequency of 10 kHz. The AD7891-2’s SNR is
evaluated with an input frequency of 100 kHz.
3This throughput rate can only be achieved when the part is operated in the parallel interface mode. Maximum achievable throughput rate in the serial interface mode
is 357 kSPS.
4See the Terminology section.
5Sample tested during initial release and after any redesign or process change that may affect this parameter.
6REF IN must be buffered before being applied to V
INXB.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS
*
(TA = 25
∞C, unless otherwise noted)
VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Input Voltage to AGND
AD7891-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±17 V
AD7891-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . –5 V, +10 V
Reference Input Voltage to AGND . . . . –0.3 V to VDD + 0.3 V
Digital Input Voltage to DGND . . . . . . –0.3 V to VDD + 0.3 V
Digital Output Voltage to DGND . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Commercial (A, B Versions) . . . . . . . . . . . – 40
∞C to +85∞C
Automotive (Y Version) . . . . . . . . . . . . . . –55
∞C to +105∞C
Storage Temperature Range . . . . . . . . . . . . –65
∞C to +150∞C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150
∞C
MQFP Package, Power Dissipation . . . . . . . . . . . . . . 450 mW
qJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 95∞C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215
∞C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
∞C
PLCC Package, Power Dissipation . . . . . . . . . . . . . . 500 mW
qJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 55∞C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215
∞C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
∞C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7891 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AD7891ASZ-1 | 制造商:Analog Devices 功能描述:IC 12-BIT ADC |
| AD7891ASZ-1REEL | 功能描述:IC DAS 12BIT 8CH 44-MQFP RoHS:是 类别:集成电路 (IC) >> 数据采集 - ADCs/DAC - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:50 系列:- 类型:数据采集系统（DAS） 分辨率（位）:16 b 采样率（每秒）:21.94k 数据接口:MICROWIRE?，QSPI?，串行，SPI? 电压电源:模拟和数字 电源电压:1.8 V ~ 3.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:40-WFQFN 裸露焊盘 供应商设备封装:40-TQFN-EP（6x6） 包装:托盘 |
| AD7891ASZ-2 | 功能描述:IC DAS 12BIT 8CH 44-MQFP RoHS:是 类别:集成电路 (IC) >> 数据采集 - ADCs/DAC - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:50 系列:- 类型:数据采集系统（DAS） 分辨率（位）:16 b 采样率（每秒）:21.94k 数据接口:MICROWIRE?，QSPI?，串行，SPI? 电压电源:模拟和数字 电源电压:1.8 V ~ 3.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:40-WFQFN 裸露焊盘 供应商设备封装:40-TQFN-EP（6x6） 包装:托盘 |
| AD7891ASZ-2REEL | 功能描述:IC DAS 12BIT 8CH 44-MQFP RoHS:是 类别:集成电路 (IC) >> 数据采集 - ADCs/DAC - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:50 系列:- 类型:数据采集系统（DAS） 分辨率（位）:16 b 采样率（每秒）:21.94k 数据接口:MICROWIRE?，QSPI?，串行，SPI? 电压电源:模拟和数字 电源电压:1.8 V ~ 3.6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:40-WFQFN 裸露焊盘 供应商设备封装:40-TQFN-EP（6x6） 包装:托盘 |
| AD7891BP1 | 制造商:Analog Devices 功能描述: |
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