参数资料
| 型号： | AD823AR |
| 厂商： | Analog Devices Inc |
| 文件页数： | 5/20页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP JFET R-R DUAL LN 8SOIC |
| 标准包装： | 98 |
| 放大器类型： | J-FET |
| 电路数： | 2 |
| 输出类型： | 满摆幅 |
| 转换速率： | 25 V/µs |
| -3db带宽： | 16MHz |
| 电流 - 输入偏压： | 5pA |
| 电压 - 输入偏移： | 700µV |
| 电流 - 电源： | 7mA |
| 电流 - 输出 / 通道： | 17mA |
| 电压 - 电源，单路/双路(±)： | 3 V ~ 36 V，±1.5 V ~ 18 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
Data Sheet
AD823
Rev. E | Page 13 of 20
THEORY OF OPERATION
The AD823 is fabricated on the Analog Devices, Inc. proprietary
complementary bipolar (CB) process that enables the construction
of PNP and NPN transistors with similar fT’s in the 600 MHz to
800 MHz region. In addition, the process also features N-Channel
JFETs that are used in the input stage of the AD823. These
process features allow the construction of high frequency, low
distortion op amps with picoamp input currents. This design
uses a differential output input stage to maximize bandwidth
and headroom (see Figure 36). The smaller signal swings
required on the S1P/S1N outputs reduce the effect of the
nonlinear currents due to junction capacitances and improve
the distortion performance. With this design, harmonic
distortion of better than 91 dB @ 20 kHz into 600 Ω with
VOUT = 4 V p-p on a single 5 V supply is achieved. The
complementary common emitter design of the output stage
provides excellent load drive without the need for emitter
followers, thereby improving the output range of the device
considerably with respect to conventional op amps. The
AD823 can drive 20 mA with the outputs within 0.6 V of the
supply rails. The AD823 also offers outstanding precision for a
high speed op amp. Input offset voltages of 1 mV maximum
and offset drift of 2 V/°C are achieved through the use of the
Analog Devices advanced thin film trimming techniques.
A nested integrator topology is used in the AD823 (see Figure 37).
The output stage can be modeled as an ideal op amp with a
single-pole response and a unity-gain frequency set by
transconductance gm2 and Capacitor C2. R1 is the output
impedance of the input stage; gm is the input transconductance.
C1 and C5 provide Miller compensation for the overall op amp.
The unity-gain frequency occurs at gm/C5. Solving the node
equations for this circuit yields
(
)
[
]
(
)
+
×
+
=
1
2
m
g
C2
s
A2
C1
sR1
A0
Vi
V
OUT
where:
A0 = gmgm2 R2R1 (open-loop gain of op amp).
A2 = gm2 R2 (open-loop gain of output stage).
The first pole in the denominator is the dominant pole of the
amplifier and occurs at ~18 Hz. This equals the input stage
output impedance R1 multiplied by the Miller-multiplied value
of C1. The second pole occurs at the unity-gain bandwidth of
the output stage, which is 23 MHz. This type of architecture
allows more open-loop gain and output drive to be obtained
than a standard 2-stage architecture would allow.
VCC
VINP
VINN
VEE
R42
R37
J1
J6
I1
C6
R33
I2
R43
I3
Q56
S1P
Q72
Q61
Q46
I5
VBE + 0.3V
S1N
Q53
Q35
Q48
VCC
Q21
Q62
Q60
Q54
R44
R28
Q52
I4
Q59
A = 1
VB
C1
Q17
A = 19
VOUT
C2
Q18
Q49
Q55
Q43
I6
Q44
A = 1
Q57
A = 19
Q58
V1
00901-
036
Figure 36. Simplified Schematic
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AD823AR | 制造商:Analog Devices 功能描述:SEMICONDUCTORS LINEAR |
| AD823AR-EBZ | 功能描述:放大器 IC 开发工具 AD823AR-EBZ_A00676_EB-O8R-2Z RoHS:否 制造商:International Rectifier 产品:Demonstration Boards 类型:Power Amplifiers 工具用于评估:IR4302 工作电源电压:13 V to 23 V |
| AD823AR-REEL | 功能描述:IC OPAMP JFET R-R DUAL LN 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:1 系列:- 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.028 V/µs 增益带宽积:105kHz -3db带宽:- 电流 - 输入偏压:3nA 电压 - 输入偏移:100µV 电流 - 电源:3.3µA 电流 - 输出 / 通道:12mA 电压 - 电源，单路/双路(±):2.7 V ~ 12 V，±1.35 V ~ 6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:剪切带 (CT) 其它名称:OP481GRUZ-REELCT |
| AD823AR-REEL7 | 功能描述:IC OPAMP JFET R-R DUAL LN 8SOIC RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:73 系列:Over-The-Top® 放大器类型:通用 电路数:4 输出类型:满摆幅 转换速率:0.07 V/µs 增益带宽积:200kHz -3db带宽:- 电流 - 输入偏压:1nA 电压 - 输入偏移:285µV 电流 - 电源:50µA 电流 - 输出 / 通道:25mA 电压 - 电源，单路/双路(±):2 V ~ 44 V，±1 V ~ 22 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-WFDFN 裸露焊盘 供应商设备封装:16-DFN-EP（5x3） 包装:管件 |
| AD823ARZ | 功能描述:IC OPAMP JFET R-R DUAL LN 8SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:2,500 系列:- 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.6 V/µs 增益带宽积:1MHz -3db带宽:- 电流 - 输入偏压:45nA 电压 - 输入偏移:2000µV 电流 - 电源:1.4mA 电流 - 输出 / 通道:40mA 电压 - 电源，单路/双路(±):3 V ~ 32 V，±1.5 V ~ 16 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:LM324ADTBR2G-NDLM324ADTBR2GOSTR |
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