参数资料
型号: ADG1207YRUZ
厂商: Analog Devices Inc
文件页数: 18/20页
文件大小: 0K
描述: IC MULTIPLEXER DUAL 8X1 28TSSOP
产品培训模块: Switch Fundamentals
标准包装: 50
系列: iCMOS®
功能: 多路复用器
电路: 2 x 8:1
导通状态电阻: 475 欧姆
电压电源: 单/双电源
电压 - 电源,单路/双路(±): 12V,±15V
电流 - 电源: 260µA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 28-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 28-TSSOP
包装: 管件
产品目录页面: 789 (CN2011-ZH PDF)
ADG1206/ADG1207
Rev. A | Page 7 of 20
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
VDD to VSS
35 V
VDD to GND
0.3 V to +25 V
VSS to GND
+0.3 V to 25 V
Analog, Digital Inputs1
VSS 0.3 V to VDD + 0.3 V
or 30 mA, whichever
occurs first
Continuous Current, S or D
30 mA
Peak Current, S or D (Pulsed at 1 ms,
10% Duty Cycle Maximum)
100 mA
Operating Temperature Ranges
Industrial (Y Version)
–40°C to +125°C
Storage
–65°C to +150°C
Junction Temperature
150°C
28-Lead TSSOP
θJA, Thermal Impedance
97.9°C/W
θJC, Thermal Impedance
14°C/W
32-Lead LFCSP_VQ
θJA, Thermal Impedance
27.27°C/W
Reflow Soldering Peak Temperature
(Pb-Free)
260(+0/5)°C
1 Overvoltages at A, EN, S, or D are clamped by internal diodes. Current should
be limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at any
one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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