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参数资料
| 型号： | ADN2531ACPZ-R2 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | IC LASER DRIVER 11.3GBPS 16LFCSP |
| 标准包装： | 1 |
| 类型： | 激光二极管驱动器 |
| 数据速率： | 11.3Gbps |
| 通道数： | 1 |
| 电源电压： | 3 V ~ 3.6 V |
| 电流 - 电源： | 36mA |
| 电流 - 调制： | 80mA |
| 电流 - 偏置： | 100mA |
| 工作温度： | -40°C ~ 100°C |
| 封装/外壳： | 16-VFQFN 裸露焊盘，CSP |
| 供应商设备封装： | 16-LFCSP-VQ |
| 包装： | 标准包装 |
| 安装类型： | 表面贴装 |
| 其它名称： | ADN2531ACPZ-R2DKR |
Data Sheet
ADN2531
SPECIFICATIONS
V CC = VCC MIN to VCC MAX , T A = ?40°C to +100°C, 12 ? differential load impedance, crosspoint adjust disabled, unless otherwise noted.
Typical values are specified at 25°C and I BIAS = I MOD = 40 mA with crosspoint adjust disabled, unless otherwise noted.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
BIAS CURRENT (I BIAS )
Bias Current Range
10
100
mA
Bias Current While ALS Asserted
300
μA
ALS = high
Compliance Voltage 1
0.6
0.55
V CC
V CC
V
V
I BIAS = 80 mA
I BIAS = 10 mA
MODULATION CURRENT (IMODP, IMODN)
Modulation Current I MOD Range
I MOD While ALS Asserted
10
70
80
500
mA diff
mA diff
μA diff
R LOAD = 5 Ω to 50 Ω differential
R LOAD = 100 Ω differential
ALS = high
Crosspoint Adjust (CPA) Range 2
Rise Time (20% to 80%) 2, 3, 4
35
26
26
<0.5
65
32.5
32.5
%
ps
ps
ps rms
Deterministic Jitter 2, 4, 5
Differential |S22|
Compliance Voltage 1
V CC ? 1.1
5.4
5.8
5.4
5.8
?5
?10.5
8.2
8.2
8.2
8.2
V CC + 1.1
ps p-p
ps p-p
ps p-p
ps p-p
dB
dB
V
10.7 Gbps, CPA disabled
10.7 Gbps, CPA 35% to 65%
11.3 Gbps, CPA disabled
11.3 Gbps, CPA 35% to 65%
5 GHz < f < 10 GHz, Z 0 = 100 Ω differential 7
f < 5 GHz, Z 0 = 100 Ω differential 7
DATA INPUTS (DATAP, DATAN)
Input Data Rate
11.3
Gbps
NRZ
Differential Input Swing
Differential |S11|
0.15
?15
1.6
V p-p diff
dB
Differential ac-coupled
f < 10 GHz, Z 0 = 100 Ω differential
Input Termination Resistance
85
100
115
Ω
Differential
BIAS CONTROL INPUT (BSET)
BSET Voltage to I BIAS Gain
100
mA/V
BSET Input Resistance
800
1000
1200
Ω
MODULATION CONTROL INPUT (MSET)
MSET Voltage to I MOD Gain
MSET Input Resistance
BIAS MONITOR (IBMON)
I BMON to I BIAS Ratio
120
600
10
mA/V
Ω
μA/mA
Accuracy of I BIAS to I BMON Ratio
?5.0
?4.0
?2.5
?2
+5.0
+4.0
+2.5
+2
%
%
%
%
10 mA ≤ I BIAS < 20 mA, R IBMON = 750 Ω
20 mA ≤ I BIAS < 40 mA, R IBMON = 750 Ω
40 mA ≤ I BIAS < 70 mA, R IBMON = 750 Ω
70 mA ≤ I BIAS < 80 mA, R IBMON = 750 Ω
AUTOMATIC LASER SHUTDOWN (ALS)
V IH
V IL
2.0
0.8
V
V
I IL
I IH
?20
0
+20
200
μA
μA
ALS Assert Time
ALS Negate Time
2
10
μs
μs
Rising edge of ALS to falling edge of I BIAS and
Falling edge of ALS to rising edge of I BIAS and
Rev. A | Page 3 of 20
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