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参数资料
| 型号： | ADP191ACBZ-R7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 5/16页 |
| 文件大小： | 0K |
| 描述： | IC CTLR HIGH LSIDE PWR SW 4WLCSP |
| 产品变化通告： | 8mm Carrier Tape Changes 28/Feb/2012 |
| 标准包装： | 1 |
| 类型： | 高端开关 |
| 导通状态电阻： | 105 毫欧 |
| 电源电压： | 1.1 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-WFBGA，WLCSP |
| 供应商设备封装： | 4-WLCSP（0.76x0.76） |
| 包装： | 标准包装 |
| 配用： | ADP191CB-EVALZ-ND - EVAL BOARD FOR ADP191 |
| 其它名称： | ADP191ACBZ-R7DKR |
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
VIN to GND Pins ?0.3 V to +4.0 V
VOUT to GND Pins ?0.3 V to V IN
EN to GND Pins ?0.3 V to +4.0 V
Continuous Drain Current
T A = 25°C ±1 A
T A = 85°C ±500 mA
Continuous Diode Current ?50 mA
Storage Temperature Range ?65°C to +150°C
Operating Junction Temperature Range ?40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP190 / ADP191 can be damaged when the
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that T J is within the specified
temperature limits. In applications with high power dissipation
and poor PCB thermal resistance, the maximum ambient
temperature may need to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (T J ) of
the device is dependent on the ambient temperature (T A ), the
power dissipation of the device (P D ), and the junction-to-ambient
thermal resistance of the package (θ JA ).
Maximum junction temperature (T J ) is calculated from the
ambient temperature (T A ) and power dissipation (P D ) using the
ADP190/ADP191
Junction-to-ambient thermal resistance (θ JA ) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ JA may vary, depending on
PCB material, layout, and environmental conditions. The speci-
fied values of θ JA are based on a 4-layer, 4 inch × 3 inch PCB.
See JESD51-7 and JESD51-9 for detailed information regarding
board construction. For additional information, see the AN-617
application note, MicroCSP TM Wafer Level Chip Scale Package .
Ψ JB is the junction-to-board thermal characterization parameter
with units of °C/W. Ψ JB of the package is based on modeling and
calculation using a 4-layer board. The JESD51-12 document,
Guidelines for Reporting and Using Electronic Package Thermal
Information , states that thermal characterization parameters are
not the same as thermal resistances. Ψ JB measures the component
power flowing through multiple thermal paths rather than through
a single path, as in thermal resistance (θ JB ). Therefore, Ψ JB thermal
paths include convection from the top of the package as well as
radiation from the package, factors that make Ψ JB more useful
in real-world applications. Maximum junction temperature (T J )
is calculated from the board temperature (T B ) and the power
dissipation (P D ) using the formula
T J = T B + ( P D × Ψ JB )
See JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about Ψ JB .
THERMAL RESISTANCE
θ JA and Ψ JB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type θ JA Ψ JB Unit
4-Ball, 0.4 mm Pitch WLCSP 260 58.4 °C/W
ESD CAUTION
formula
T J = T A + ( P D × θ JA )
Rev. E | Page 5 of 16
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相关代理商/技术参数 |
参数描述 |
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| ADP191CB-EVALZ | 功能描述:EVAL BOARD FOR ADP191 RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:- 标准包装:1 系列:- 主要目的:电信，线路接口单元（LIU） 嵌入式:- 已用 IC / 零件:IDT82V2081 主要属性:T1/J1/E1 LIU 次要属性:- 已供物品:板，电源，线缆，CD 其它名称:82EBV2081 |
| ADP194 | 制造商:AD 制造商全称:Analog Devices 功能描述:Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V |
| ADP194ACBZ-R7 | 功能描述:IC POWER SWITCH HS LOGIC 4WLSCP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:2,500 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:35 毫欧 电流 - 输出 / 通道:- 电流 - 峰值输出:3A 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:14-TSSOP 包装:带卷 (TR) 其它名称:MIC2545A-1YTSTRMIC2545A-1YTSTR-ND |
| ADP194CB-EVALZ | 功能描述:BOARD EVAL FOR ADP194ACBZ RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:* 标准包装:1 系列:- 主要目的:电信，线路接口单元（LIU） 嵌入式:- 已用 IC / 零件:IDT82V2081 主要属性:T1/J1/E1 LIU 次要属性:- 已供物品:板，电源，线缆，CD 其它名称:82EBV2081 |
| ADP195 | 制造商:AD 制造商全称:Analog Devices 功能描述:Logic Controlled, High-Side Power Switch with Reverse Current Blocking |
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