参数资料
型号: ADSP-21061LKB-160
厂商: Analog Devices Inc
文件页数: 18/52页
文件大小: 0K
描述: IC DSP CONTROLLER 32BIT 225BGA
产品培训模块: SHARC Processor Overview
标准包装: 1
系列: SHARC®
类型: 浮点
接口: 同步串行端口(SSP)
时钟速率: 40MHz
非易失内存: 外部
芯片上RAM: 128kB
电压 - 输入/输出: 3.30V
电压 - 核心: 3.30V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 225-BBGA
供应商设备封装: 225-PBGA
包装: 托盘
Rev. D | Page 25 of 52 | May 2013
Memory Write—Bus Master
Use these specifications for asynchronous interfacing to memo-
ries (and memory-mapped peripherals) without reference to
CLKIN. These specifications apply when the ADSP-21061 is the
bus master accessing external memory space in asynchronous
access mode. Note that timing for ACK, DATA, RD, WR, and
DMAGx strobe timing parameters only applies to asynchronous
access mode.
Table 13. Memory Write—Bus Master
5 V and 3.3 V
Unit
Parameter
Min
Max
Timing Requirements
tDAAK
ACK Delay from Address, Selects1, 2
15 + 7DT/8 + W
ns
tDSAK
ACK Delay from WR Low1
8 + DT/2 + W
ns
Switching Characteristics
tDAWH
Address, Selects to WR Deasserted2
17 + 15DT/16 + W
ns
tDAWL
Address, Selects to WR Low2
3 + 3DT/8
ns
tWW
WR Pulse Width
13 + 9DT/16 + W
ns
tDDWH
Data Setup Before WR High
7 + DT/2 + W
ns
tDWHA
Address Hold After WR Deasserted
1 + DT/16 + H
ns
tDATRWH Data Disable After WR Deasserted3
1 + DT/16 +H
6 + DT/16+H
ns
tWWR
WR High to WR, RD, DMAGx Low
8 + 7DT/16 + H
ns
tDDWR
Data Disable Before WR or RD Low
5 + 3DT/8 + I
ns
tWDE
WR Low to Data Enabled
–1 + DT/16
ns
tSADADC Address, Selects to ADRCLK High2
0 + DT/4
ns
W = (number of wait states specified in WAIT register) × tCK.
H = tCK (if an address hold cycle occurs, as specified in WAIT register; otherwise H = 0).
I = tCK (if a bus idle cycle occurs, as specified in WAIT register; otherwise I = 0).
1 ACK delay/setup: User must meet tDAAK or tDSAK or synchronous specification tSAKC for deassertion of ACK (low), all three specifications must be met for assertion of ACK
(high).
2 The falling edge of MSx, SW, BMS is referenced.
3 For more information, see Example System Hold Time Calculation on Page 43 for calculation of hold times given capacitive and dc loads.
Figure 15. Memory Write—Bus Master
RD, DMAG
ACK
DATA
WR
ADDRESS
MSX, SW
BMS
tWW
tSADADC
tDAAK
tWWR
ADRCLK
(OUT)
tDWHA
tDSAK
tDAWL
tWDE
tDDWR
tDATRWH
tDDWH
tDAWH
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