参数资料
型号: ADUC831BCPZ
厂商: Analog Devices Inc
文件页数: 22/76页
文件大小: 0K
描述: IC MCU 62K FLASH ADC/DAC 56LFCSP
标准包装: 1
系列: MicroConverter® ADuC8xx
核心处理器: 8052
芯体尺寸: 8-位
速度: 16MHz
连通性: EBI/EMI,I²C,SPI,UART/USART
外围设备: PSM,温度传感器,WDT
输入/输出数: 34
程序存储器容量: 62KB(62K x 8)
程序存储器类型: 闪存
EEPROM 大小: 4K x 8
RAM 容量: 2.25K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 8x12b,D/A 2x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 56-VFQFN 裸露焊盘,CSP
包装: 托盘
配用: EVAL-ADUC831QSZ-ND - KIT DEV FOR ADUC831 QUICK START
REV. 0
ADuC831
–29–
USING THE FLASH/EE DATA MEMORY
The 4 kBytes of Flash/EE data memory is configured as 1024
pages, each of four bytes. As with the other ADuC831 peripherals,
the interface to this memory space is via a group of registers mapped
in the SFR space. A group of four data registers (EDATA1–4)
are used to hold the four bytes of data at each page. The page is
addressed via the two registers EADRH and EADRL. Finally,
ECON is an 8-bit control register that may be written with one
of nine Flash/EE memory access commands to trigger various
read, write, erase, and verify functions.
A block diagram of the SFR interface to the Flash/EE data
memory array is shown in Figure 20.
ECON—Flash/EE Memory Control SFR
Programming of either the Flash/EE data memory or the Flash/EE
program memory is done through the Flash/EE memory control
SFR (ECON). This SFR allows the user to read, write, erase, or
verify the 4 kBytes of Flash/EE data memory or the 56 kBytes of
Flash/EE program memory.
BYTE 1
(0000H)
EDATA1
SFR
BYTE 1
(0004H)
BYTE 1
(0008H)
BYTE 1
(000CH)
BYTE 1
(0FF8H)
BYTE 1
(0FFCH)
BYTE 2
(0001H)
EDATA2
SFR
BYTE 2
(0005H)
BYTE 2
(0009H)
BYTE 2
(000DH)
BYTE 2
(0FF9H)
BYTE 2
(0FFDH)
BYTE 3
(0002H)
EDATA3
SFR
BYTE 3
(0006H)
BYTE 3
(000AH)
BYTE 3
(000EH)
BYTE 3
(0FFAH)
BYTE 3
(0FFEH)
BYTE 4
(0003H)
EDATA4
SFR
BYTE 4
(0007H)
BYTE 4
(000BH)
BYTE 4
(000FH)
BYTE 4
(0FFBH)
BYTE 4
(0FFFH)
01H
00H
02H
03H
3FEH
3FFH
PAGE
ADDRESS
(E
ADRH/L)
BYTE
ADDRESSES
ARE GIVEN IN
BRACKETS
Figure 20. Flash/EE Data Memory Control and Configuration
Table VII. ECON—Flash/EE Memory Commands
COMMAND DESCRIPTION
ECON VALUE
(NORMAL MODE) (Power-On Default)
(ULOAD MODE)
01H
Results in 4 bytes in the Flash/EE data memory,
Not Implemented. Use the MOVC instruction.
READ
addressed by the page address EADRH/L, being read
into EDATA1–4.
02H
Results in four bytes in EDATA1–4 being written to
Results in bytes 0-255 of internal XRAM being written
WRITE
the Flash/EE data memory, at the page address given by
to the 256 bytes of Flash/EE program memory at the
EADRH/L (0
≤ EADRH/L < 0400H.
page address given by EADRH. (0
≤ EADRH < E0H)
Note: The four bytes in the page being addressed must
Note: The 256 bytes in the page being addressed must
be pre-erased.
03H
Reserved Command
04H
Verifies if the data in EDATA1–4 is contained in the
Not Implemented. Use the MOVC and MOVX
VERIFY
page address given by EADRH/L. A subsequent read
instructions to verify the WRITE in software.
of the ECON SFR will result in a 0 being read if the
verification is valid, or a nonzero value being read to
indicate an invalid verification.
05H
Results in the Erase of the 4-byte page of Flash/EE data
Results in the 64-byte page of Flash/EE program
ERASE PAGE
memory addressed by the page address EADRH/L.
memory, addressed by the byte address EADRH/L
being erased. EADRL can equal any of 64 locations
within the page. A new page starts whenever EADRL
is equal to 00H, 40H, 80H, or C0H.
06H
Results in the erase of entire 4 kBytes of Flash/EE
Results in the Erase of the entire 56 kBytes of ULOAD
ERASE ALL
data memory.
Flash/EE program memory.
81H
Results in the byte in the Flash/EE data memory,
Not Implemented. Use the MOVC command.
READBYTE
addressed by the byte address EADRH/L, being read
into EDATA1. (0
≤ EADRH/L ≤ 0FFFH).
82H
Results in the byte in EDATA1 being written into
WRITEBYTE
Flash/EE data memory, at the byte address EADRH/L.
Flash/EE program memory, at the byte address
EADRH/L (0
≤ EADRH/L ≤ DFFFH).
0FH
Leaves the ECON instructions to operate on the
Enters NORMAL mode directing subsequent ECON
EXULOAD
Flash/EE data memory.
instructions to operate on the Flash/EE data memory.
F0H
Enters ULOAD mode, directing subsequent ECON
Leaves the ECON instructions to operate on the
ULOAD
instructions to operate on the Flash/EE program memory.
Flash/EE program memory.
相关PDF资料
PDF描述
ADUC832BSZ-REEL IC MCU 62K FLASH ADC/DAC 52MQFP
ADUC834BCPZ-REEL IC MCU 62K FLASH ADC/DAC 56LFCSP
ADUC836BCPZ IC MCU 62K FLASH ADC/DAC 56LFCSP
ADUC843BSZ62-5 IC ADC 12BIT W/FLASH MCU 52-MQFP
ADUC845BCPZ62-5 IC FLASH MCU W/24BIT ADC 56-CSP
相关代理商/技术参数
参数描述
ADUC831BCPZ-REEL 功能描述:IC MCU 62K FLASH ADC/DAC 56LFCSP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:MicroConverter® ADuC8xx 标准包装:38 系列:Encore!® XP® 核心处理器:eZ8 芯体尺寸:8-位 速度:5MHz 连通性:IrDA,UART/USART 外围设备:欠压检测/复位,LED,POR,PWM,WDT 输入/输出数:16 程序存储器容量:4KB(4K x 8) 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:1K x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 3.6 V 数据转换器:- 振荡器型:内部 工作温度:-40°C ~ 105°C 封装/外壳:20-SOIC(0.295",7.50mm 宽) 包装:管件 其它名称:269-4116Z8F0413SH005EG-ND
ADUC831BS 制造商:Analog Devices 功能描述:MCU 8-Bit ADuC8xx 8052 CISC 62KB Flash 3.3V/5V 52-Pin MQFP 制造商:Analog Devices 功能描述:8BIT MCU +12BIT ADC LQFP52 831
ADUC831BS-REEL 制造商:Analog Devices 功能描述:MCU 8-bit ADuC8xx 8052 CISC 62KB Flash 3.3V/5V 52-Pin MQFP T/R
ADUC831BSZ 功能描述:IC ADC/DAC 12BIT W/MCU 52-MQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:MicroConverter® ADuC8xx 标准包装:250 系列:56F8xxx 核心处理器:56800E 芯体尺寸:16-位 速度:60MHz 连通性:CAN,SCI,SPI 外围设备:POR,PWM,温度传感器,WDT 输入/输出数:21 程序存储器容量:40KB(20K x 16) 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:6K x 16 电压 - 电源 (Vcc/Vdd):2.25 V ~ 3.6 V 数据转换器:A/D 6x12b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:48-LQFP 包装:托盘 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323
ADUC831BSZ-REEL 功能描述:IC MCU 62K FLASH ADC/DAC 52MQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:MicroConverter® ADuC8xx 标准包装:38 系列:Encore!® XP® 核心处理器:eZ8 芯体尺寸:8-位 速度:5MHz 连通性:IrDA,UART/USART 外围设备:欠压检测/复位,LED,POR,PWM,WDT 输入/输出数:16 程序存储器容量:4KB(4K x 8) 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:1K x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 3.6 V 数据转换器:- 振荡器型:内部 工作温度:-40°C ~ 105°C 封装/外壳:20-SOIC(0.295",7.50mm 宽) 包装:管件 其它名称:269-4116Z8F0413SH005EG-ND