参数资料
型号: AG606-G
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 50 MHz - 860 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: GREEN, MS-012, SOIC-8
文件页数: 3/5页
文件大小: 320K
代理商: AG606-G
TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 3 of 5
July 2009
AG606
Push-Pull CATV Amplifier
Application Circuit PC Board Layout
Circuit Board Material: .028” FR4, 4 - layer, 1 oz copper, Microstrip line details: width = .021”,
spacing = .021”. C1, C2, R3, C3, R4 and C4 are shown in the silkscreen but are not required in the schematic.
Typical RF Performance at 25 °°°°C
1. Balun, board, and connector losses have not been extracted, but typically account for
0.4 dB loss midband and 1.1 dB loss at 860 MHz.
2. CSO, CTB, & XMOD are measured at +34 dBmV/channel, 79 channels Flat Loading.
3. OIP2 is measured at f1 + f2 at 5 dBm / tone.
4. OIP3 is measured at +5 dBm / tone with 1 MHz spacing.
Recommended Bias Resistor Values
Supply Voltage
R1/R2 Value
Size
7 V
20.5 ohms
1206
8 V
32.5 ohms
1210
9 V
44.5 ohms
2010
10 V
56.5 ohms
2010
12 V
81 ohms
2010
24 V
227 ohms
2 Watts
75
Push-Pull Application Circuit Performance
(Vsupply = +7 V, Rbias= 20.5
, 25 °°°°C)
S21 vs. Frequency
6
8
10
12
14
16
0
200
400
600
800
1000
Frequency (MHz)
S
2
1
(d
B
)
+25°C
-40°C
+85°C
S11 vs. Frequency
-40
-30
-20
-10
0
200
400
600
800
1000
Frequency (MHz)
S
1
(d
B
)
+25°C
-40°C
+85°C
S22 vs. Frequency
-40
-30
-20
-10
0
200
400
600
800
1000
Frequency (MHz)
S
2
(d
B
)
+25°C
-40°C
+85°C
Frequency
MHz
50
250
450
860
Gain
(1)
dB
14.3
14.2
13.9
12.9
Input R.L.
dB
21
28
18
11
Output R.L.
dB
17
18
16
18
CTB
(2)
dBc
-69
-67
CSO
(2)
dBc
-81
-87
-80
XMOD
(2)
dBc
-60
-61
-60
Output P1dB
dBm
+20.7 +20.5 +20.3
+22
Output IP2
(3)
dBm
+73.6 +76.1 +76.4 +76.6
Output IP3
(4)
dBm
+37.5 +37.5 +37.3 +39.2
Noise Figure
(1)
dB
5
5.3
5.9
Device Current
mA
165
Device Voltage
V
+5.25
T1: M/A Com ETC1-1-13
T2: M/A Com ETC1-1-13
5. All components are 0603 in size unless otherwise noted.
6. 1% tolerance is for R1 and R2.
7. The dc resistance of L1 and L2 should be less than 1 ohm.
相关PDF资料
PDF描述
AGC-553 10 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AGC-7-30/10AC 25 MHz - 35 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
AGC-7-30/10A 25 MHz - 35 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
AGC-7-70/30AC 55 MHz - 85 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
AGC-7-21.4/10A 16.4 MHz - 26.4 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
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