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参数资料
| 型号： | AGR09045EU |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 5/7页 |
| 文件大小： | 307K |
| 代理商： | AGR09045EU |
AGR09045E
45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Figure 4. ACPR vs. POUT
Figure 5. Power Gain and Return Loss vs. Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
5
10
15
20
25
POUT (W)S
ACPR
(dBc
)S
ACP+
ACP-
ACP1+
ACP1-
VDD = 28 Vdc, IDQ = 0.45 A, TC = 30 °C,
IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8 THROUGH 13.
OFFSET 1 = 750 kHz, 30 kHz BANDWIDTH. OFFSET 2 = 1.98 MHz, 30 kHz BANDWIDTH.
FREQUENCY = 880 MHz
10
11
12
13
14
15
16
17
18
19
20
21
22
860
865
870
875
880
885
890
895
900
FREQUENCY (MHz)S
P
O
W
E
R
G
A
IN
(d
B
)S
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT
RETURN
LOSS
(dB)
S
POUT = 10 W
RETURN LOSS
VDD = 28 Vdc, IDQ = 0.45 A, TC = 30 °C
WAVEFORM = CW
POWER GAIN
POUT = 60 W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09045WEF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09070EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09085E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09085EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09085EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET |
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