- 您现在的位置：买卖IC网 > PDF目录51253 > AGR19125EF (TRIQUINT SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | AGR19125EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 366K |
| 代理商： | AGR19125EF |
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19125E is a 125 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS)
(1930 MHz—1990 MHz), time-division multiple
access (TDMA), and single-carrier or multicarrier
class AB power amplifier applications.
Figure 1. Available Packages
Features
Typical 2 carrier, N-CDMA performance for
VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz,
F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,
traffic channels 8—13) 1.2288 MHz channel
bandwidth (BW). Adjacent channels measured
over a 30 kHz BW at F1 – 0.885 MHz and
F2 + 0.885 MHz. Intermodulation distortion
products measured over a 1.2288 MHz BW at
F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average
(P/A) = 9.72 dB at 0.01% probability on CCDF:
— Output power: 24 W.
— Power gain: 15 dB.
— Efficiency: 24%.
— ACPR: –48 dBc.
— IMD3: –34 dBc.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W contin-
uous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19125EU (unflanged) AGR19125EF (flanged)
Parameter
Sym
Value Unit
Thermal Resistance,
Junction to Case:
AGR19125EU
AGR19125EF
R JC
0.5
°C/W
Parameter
Sym Value Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS –0.5, +15 Vdc
Total Dissipation at TC = 25 °C:
AGR19125EU
AGR19125EF
PD
350
W
Derate Above 25 °C:
AGR19125EU
AGR19125EF
—
2.0
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range TSTG –65, +150 °C
AGR19125E
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
PEAK Devices
相关PDF资料 |
PDF描述 |
|---|---|
| AGR19125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21030EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19125EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19K180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21030EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。