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参数资料
| 型号： | AGR19125EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 366K |
| 代理商： | AGR19125EF |
E
5
2
1
9
1
R
G
A
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19125E
A. Schematic
B. Component Layout
Figure 2. AGR19125E Test Circuit
Parts List:
?
Microstrip Line:
Z1 0.785 in. x 0.065 in.
Z2 0.205 in. x 0.065 in.
Z3 0.070 in. x 0.255 in.
Z4 0.378 in. x 0.065 in.
Z5 0.177 in. x 0.860 in.
Z6 0.050 in. x 0.247 in.
Z7 0.050 in. x 0.593 in.
Z8 0.500 in. x 1.030 in.
Z9 0.323 in. x 0.185 in.
Z10 0.465 in. x 0.115 in.
Z11 0.075 in. x 0.065 in.
Z12 0.252 in. x 0.065 in.
?
ATC
chip capacitor:
C1 10 pF 100B100JW500X
C5, C14, C15: 5.6 pF100B5R6BW500X
C9 6.8 pF 100B6R8JW500X
C10 1.2 pF 100B1R2BW500X
C16: 15 pF 100B150JW500X.
?
Sprague
tantalum surface-mount chip capacitor:
C2, C4, C11, C12: 22 F, 35 V.
?
Kemet
1206 size chip capacitor:
C6, C13: 0.1 F C1206104K5RAC7800.
?
Murata
0805 size chip capacitor:
C8 0.01 F GRM40X7R103K100AL.
?
Johanson Giga-Trim
variable capacitor:
C17 0.6 pF to 4.5 pF 27271SL.
?
1206 size chip capacitor: C3, C7: 22000 pF.
?
1206 size chip resistor: R1 1 kΩ; R2 560 kΩ; R3 4.7 Ω.
?
Fair-Rite
ferrite bead: FB1 2743019447.
?
Taconic
ORCER RF-35: board material, 1 oz. cop-
per, 30 mil thickness,
εr = 3.5.
DUT
R3
C2
R2
R1
+
C3
C4
+
C5
FB1
Z6
Z1 C1 Z2
Z3
Z4
Z5
Z8
Z9
Z10
Z13
6
C
7
C
8
C
9
C
Z7
C13
1
C
2
1
C
+
C10
C14
RF INPUT
VGG
VDD
RF
C16
C15
OUTPUT
+
1
2
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z11
C17
相关PDF资料 |
PDF描述 |
|---|---|
| AGR19125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EF | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21030EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19125EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19K180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21030EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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