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参数资料
| 型号： | AGR19125EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 366K |
| 代理商： | AGR19125EF |
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
E
5
2
1
9
1
R
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A
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* IS-95 N-CDMA P/A = 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz.
VDD = 28 Vdc, IDQ = 1250 mA, and POUT = 24 W avg.
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Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 200 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
4
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
12
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
GFS
—
9
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 400 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 28 V, ID = 1200 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID
V
)
A
1
=
DS(ON)
—
0.08
—
Vdc
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Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
—
3.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
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PS
14
15
—
dB
Drain Efficiency*
η
—
24
—
%
Third-order Intermodulation Distortion*
(IMD3 measured over 1.2288 MHz BW @ f1 – 2.5 MHz
and f2 + 2.5 MHz)
IM3
—
–34
—
dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 30 kHz @ f1 – 0.885 MHz
and f2 + 0.885 MHz)
ACPR
—
–48
—
dBc
B
d
—
0
1
–
—
L
R
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Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 1960.0 MHz)
P1dB
—
125
—
W
Output Mismatch Stress
(VDD = 28 V, POUT = 125 W (CW), IDQ = 1250 mA, fC = 1960.0 MHz
VSWR = 10:1; [all phase angles])
ψ
No degradation in output power.
400
200
(in Supplied Test Fixture)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19125EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19K180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21030EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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