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参数资料
| 型号： | AGR09180EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 2/9页 |
| 文件大小： | 407K |
| 代理商： | AGR09180EF |
180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09180EF
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
(Measurements made on of device)
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 300 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
6
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
16
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1.0 A)
GFS
—
12
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 600 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 28 V, IDQ = 2 x 850 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1.0 A)
VDS(ON)
—
0.06
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
(Measurements made on of device)
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
COSS
—
46
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
2.4
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(VDS = 28 V, POUT = 38 W, IDQ = 2 x 850 mA)
GL
17.5 18.25 —
dB
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 2 x 850 mA)
P1dB
180
210
—
W
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 2 x 850 mA)
—
58
—
%
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 180 WPEP,
IDQ = 2 x 850 mA)
IMD
—
–30
—
dBc
Input VSWR
VSWRI
—
2:1
—
Ruggedness
(VDS = 28 V, POUT = 180 W, IDQ = 2 x 850 mA, f = 880 MHz,
VSWR = 10:1, all angles)
—
No degradation in output power.
400
200
(in Supplied Test Fixture)
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