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参数资料
| 型号： | AGR18060EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 2/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18060EF |
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
E
0
6
0
8
1
R
G
A
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
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Off Characteristics
Drain-source Breakdown Voltage (VGS = 0 V, ID = 90 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
1.8
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)
IDSS
—
5.5
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.45 A)
GFS
—
4.0
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 180 A)
VGS(th)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 26 V, ID = 500 mA)
VGS(Q)
—
3.6
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 0.45 A)
VDS(on)
—
0.08
—
Vdc
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Dynamic Characteristics
Transfer Capacitance
(VDS = 26 V, VGS = 0, f = 1 MHz)
(Part is internally matched both on input and output.)
CRSS
—
1.3
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Two-Tone Common-source Amplifier Power Gain
(VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
GPS
—
15
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
η
—
41
—
%
Third-order Intermodulation Distortion*
(VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
IM3
—
–26
—
dBc
Input Return Loss
(VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
IRL
—
–10
—
dB
Output Power at 1 dB Gain Compression
(VDD = 26 V, POUT = 60 W CW, f = 1880 MHz, IDQ = 500 mA)
P1dB
—
60
—
W
Ruggedness
(VDD = 26 V, POUT = 60 W CW, IDQ = 500 mA, f = 1880 MHz,
VSWR = 10:1 [all phase angles])
Ψ
No degradation in output
power.
100
(in Supplied Test Fixture)
= 300A
相关PDF资料 |
PDF描述 |
|---|---|
| AGR18060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
| AGR18090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
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