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参数资料
| 型号： | AGR18060EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 7/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18060EF |
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60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
VDD = 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 9. Power Gain Versus Output Power
VDD = 26 V, FREQUENCY = 1842.5 MHz, IDQ = 700 mA, TWO-TONES, 100 kHz SPACING.
Figure 10. Intermodulation Products Versus Output Power
12.00
13.00
14.00
15.00
16.00
17.00
1.00
10.00
100.00
POUT, OUTPUT POWER (WATTS) PEP
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PS
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OW
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GA
IN
(d
B)
Z
IDQ = 900 mA
IDQ = 700 mA
IDQ = 500 mA
IDQ = 300 mA
-70.0
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
10.00
100.00
POUT, OUTPUT POWER (WATTS) PEPZ
IM
D,
IN
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RM
OD
UL
AT
IO
N
DI
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ON
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THIRD ORDER
FIFTH ORDER
SEVENTH ORDER
相关PDF资料 |
PDF描述 |
|---|---|
| AGR18060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
| AGR18090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18090EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
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