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参数资料
| 型号： | AGR21090EU |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 6/9页 |
| 文件大小： | 399K |
| 代理商： | AGR21090EU |
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21090E
Typical Performance Characteristics (continued)
Test Conditions:
VDD 28 Vdc, f0 = 2140 MHz, POUT = 90 W PEP.
Two-tone measurement, 10 MHz tone spacing.
Figure 6. IMD vs. Tone Spacing
Test Conditions:
VDD 28 Vdc, IDQ = 800 mA.
2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 7. Gain, Efficiency, IM3, and ACPR vs. Output Power
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR21125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21125EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21125EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR21180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21N090EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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