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参数资料
| 型号： | AGR21180EF |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-4 |
| 文件页数： | 7/11页 |
| 文件大小： | 227K |
| 代理商： | AGR21180EF |
Agere Systems Inc.
5
Preliminary Data Sheet
AGR21180EF
April 2004
180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Test Conditions:
28 VDS, IDQ = 1600 mA.
Two W-CDMA carriers, F1 = 2135 MHz and F2 = 2145 MHz each carrier has 8.98 dB P/A ratio @ 0.01% CCDF, 3.84 MHz channel BW (CBW).
Figure 4. Power Gain, Drain Efficiency, ACPR, and IM3 vs. Output Power (2 W-CDMA carrier data)
Test Conditions:
28 VDS, IDQ = 1600 mA, POUT = 38 W (average).
Two W-CDMA carriers, each carrier has 8.98 dB P/A @ 0.01% probability (CCDF), F1 = FTEST - 5 MHz and F2 = FTEST + 5 MHz , 3.84 MHz
CBW.
Figure 5. Power Gain, Drain Efficiency, ACPR, IM3, and IRL vs. Frequency (2 W-CDMA signal data)
0
5
10
15
20
25
30
35
40
45
1
10
100
POUT (W, average)
η
(%),
G
PS
(d
B
)
-70
-60
-50
-40
-30
-20
-10
0
AC
PR
(
d
Bc
),
IM3
(
d
Bc
)
GPS
η
ACPR
IM3
0
5
10
15
20
25
30
2040
2070
2100
2130
2160
2190
2220
2250
FTEST (MHz)
η
(%),
G
PS
(d
B
)
-42
-35
-28
-21
-14
-7
0
A
C
P
R
(d
B
c
),
I
M
3
(d
B
c
),
I
R
L
(d
B
)
ACPR
IM3
IRL
GPS
η
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