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参数资料
| 型号： | AGRB10XM |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 102K |
| 代理商： | AGRB10XM |
2
Agere Systems Inc.
10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET
July 2004
AGRB10XM
Preliminary Data Sheet
Electrical Characteristics
Table 2. Thermal Characteristics
Table 3. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics, 1805 MHz—1880 MHz, 1930 MHz—1990 MHz, 2110 MHz—2170 MHz
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θJC
5.5
°C/W
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C
PD
31.8
W
Derate Above 25
°C
—
0.18
W/°C
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–65, 150
°C
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =25A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
—0.3
—
Adc
Zero Gate Voltage Drain Leakage Current (VDS =26 V, VGS =0V)
IDSS
—0.9
—
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—0.65
—
S
Gate Threshold Voltage (VDS =10V, ID =43A)
VGS(TH)
—3.3
—
Vdc
Gate Quiescent Voltage (VDS =26 V, ID = 100 mA)
VGS(Q)
—3.7
—
Vdc
Drain-source On-voltage (VGS =10V, ID =0.5 A)
VDS(ON)
—0.56
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (VDS =28V, VGS =0, f=1.0 MHz)
CRSS
—0.3
—
pF
Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
COSS
—5.0
—
pF
Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
CISS
—
18.2
—
pF
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