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参数资料
| 型号： | AGRB10XM |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/5页 |
| 文件大小： | 102K |
| 代理商： | AGRB10XM |
Agere Systems Inc.
3
Preliminary Data Sheet
AGRB10XM
July 2004
10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 5. RF Characteristics, 1805 MHz—1880 MHz
1. Across band, 1805 MHz—1880 MHz.
Table 6. RF Characteristics, 1930 MHz—1990 MHz
1. Across band, 1930 MHz—1990 MHz.
Table 7. RF Characteristics, 2110 MHz—2170 MHz
1. Across band, 2110 MHz—2170 MHz.
Parameter
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain (VDS = 28 V, POUT = 5 W, IDQ = 100 mA)
GPS
—15
—
dB
Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 100 mA)
η
—58
—
%
Third-order Intermodulation Distortion (100 kHz spacing,
VDS = 28 V, POUT = 10 W PEP, IDQ = 100 mA)
IM3
@ ±400 kHz
—
–60
—
dBc
@ ±600 kHz
—
–72
—
dBc
Output Power (VDS = 28 V, 1 dB gain compression, IDQ = 100 mA)
P1dB
—
11
—
W
Input Return Loss
IRL
—
–12
—
dB
Ruggedness (VDS = 28 V, POUT = 10 W, IDQ = 100 mA,
VSWR = 10:1, all angles)
ψ
No degradation in output power.
Parameter
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain (VDS = 28 V, POUT = 5 W, IDQ = 100 mA)
GPS
—16
—
dB
Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 100 mA)
η
—58
—
%
Third-order Intermodulation Distortion (100 kHz spacing,
VDS = 28 V, POUT = 10 W PEP, IDQ = 100 mA)
IM3
—
–32
—
dBc
Output Power (VDS = 28 V, 1 dB gain compression, IDQ = 100 mA)
P1dB
—
11
—
W
Input Return Loss
IRL
—
–10
—
dB
Ruggedness (VDS = 28 V, POUT = 10 W, IDQ = 100 mA,
VSWR = 10:1, all angles)
ψ
No degradation in output power.
Parameter
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain (VDS = 28 V, POUT = 5 W, IDQ = 100 mA)
GPS
—14
—
dB
Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 100 mA)
η
—53
—
%
Third-order Intermodulation Distortion (100 kHz spacing,
VDS = 28 V, POUT = 10 W PEP, IDQ = 100 mA)
IM3
—
–28
—
dBc
Output Power (VDS = 28 V, 1 dB gain compression, IDQ = 100 mA)
P1dB
—
11
—
W
Input Return Loss
IRL
—
–10
—
dB
Ruggedness (VDS = 28 V, POUT = 10 W, IDQ = 100 mA,
VSWR = 10:1, all angles)
ψ
No degradation in output power.
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