参数资料
型号: AH114-89G
元件分类: 放大器
英文描述: 60 MHz - 2500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: GREEN, TO-243C, SOT-89, SMT, 3 PIN
文件页数: 1/6页
文件大小: 199K
代理商: AH114-89G
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 6 January 2008
AH114
Watt, High Linearity InGaP HBT Amplifier
Product Features
60 – 2500 MHz
+24 dBm P1dB
+41 dBm Output IP3
19 dB Gain @ 900 MHz
14.5 dB Gain @ 1900 MHz
+5V Single Positive Supply
Lead-free / Green / RoHS-
compliant SOT-89 Package
Applications
Final stage amplifiers for
Repeaters
Mobile Infrastructure
DBS / WLL / WLAN / WiBro
Defense / Homeland Security
Product Description
The AH114 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+41 dBm OIP3 and +24 dBm of compressed 1dB power. It
is housed in a lead-free/green/RoHS-compliant SOT-89
SMT package. All devices are 100% RF and DC tested.
The AH114 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required.
An internal active bias allows the
AH114 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
RF IN
GND
RF OUT
GND
1
23
4
Function
Pin No.
Input / Base
1
Output / Collector
3
Ground
2, 4
Specifications
(1)
Parameters
Units
Min
Typ
Max
Operational Bandwidth
MHz
60
2500
Test Frequency
MHz
1900
Gain
dB
13.5
14.5
Input Return Loss
dB
10
Output Return Loss
dB
14
Output P1dB
dBm
+23
Output IP3
(2)
dBm
+39.5
+41
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+17
Noise Figure
dB
5.0
Test Frequency
MHz
2140
Gain
dB
14
Output P1dB
dBm
+23
Output IP3
(2)
dBm
+40
Operating Current Range
mA
130
150
170
Device Voltage
V
+5
1. Test conditions unless otherwise noted: 25 C, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-65 to +150
°C
RF Input Power (continuous)
+15 dBm
Device Voltage
+6 V
Device Current
220 mA
Junction Temperature
+220
°C
Thermal Resistance, Rth
149
°C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(1)
Parameters
Units
Typical
Frequency
MHz
900
1900
2140
S21 - Gain
dB
19
14.5
14
S11 - Input R.L.
dB
-14
-10
-25
S22 - Output R.L.
dB
-10
-14
-20
Output P1dB
dBm
+24
+23
Output IP3
dBm
+40
+41
+40
Noise Figure
dB
5.0
6.0
Supply Bias
+5 V @ 150 mA
Ordering Information
Part No.
Description
AH114-89G
Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
AH114-89PCB900
900 MHz Evaluation Board
AH114-89PCB1900 1900 MHz Evaluation Board
AH114-89PCB2140 2140 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
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