参数资料
型号: AH114-89G
元件分类: 放大器
英文描述: 60 MHz - 2500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: GREEN, TO-243C, SOT-89, SMT, 3 PIN
文件页数: 4/6页
文件大小: 199K
代理商: AH114-89G
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 4 of 6 January 2008
AH114
Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (AH114-89PCB2140)
Typical RF Performance
Frequency
2140 MHz
S21 – Gain
14 dB
S11 – Input Return Loss
-25 dB
S22 – Output Return Loss
-20 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+40 dBm
Output P1dB
+23 dBm
Noise Figure
6.0 dB
Supply Voltage
+5 V
Supply Current
150 mA
Measured parameters were taken at 25
°C.
CAP
ID=C4
C=56 pF
CAP
ID=C5
C=56 pF
IND
ID=L1
L=15 nH
RES
ID=R1
R=2700 Ohm
CAP
ID=C6
C=1.5 pF
CAP
ID=C9
C=0.8 pF
DIODE1
ID=D1
CAP
ID=L2
C=1.5 pF
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=1000 pF
CAP
ID=C3
C=100000 pF
SUBCKT
ID=U1
NET="AH114"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
5.6 V
All passive components are of size 0603 unless otherwise noted.
size 1206
size 0805
39° @ 2.14GHz from pin 3.
The capacitor should be placed
screen marker "6" on the WJ evaluation board.
C9 should be placed at the silk
33° @ 2.14GHz from pin 1.
The capacitor should be placed
screen marker "F" on the WJ evaluation board.
C6 should be placed at the silk
from pin 1 of the AH114.
L2 should be placed 19.5° @ 2.14GHz
1.9
2
2.1
2.2
2.3
Frequency (GHz)
Application Circuit: 2140 MHz
-25
-20
-15
-10
-5
0
5
10
15
M
agn
it
u
d
e
(
d
B)
DB(|S[1,1]|) *
DB(|S[2,1]|) *
DB(|S[2,2]|) *
W-CDMA ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
-60
-55
-50
-45
-40
-35
12
13
14
15
16
Output Channel Power (dBm)
ACLR
(dBc)
freq = 2140 MHz
70 MHz Reference Design
Typical RF Performance
Frequency
70 MHz
S21 – Gain
23.4 dB
S11 – Input Return Loss
-15 dB
S22 – Output Return Loss
-14 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+44.5 dBm
Output P1dB
+23.8 dBm
Noise Figure
6.5 dB
Supply Voltage
+5 V
Supply Current
150 mA
Measured parameters were taken at 25
°C.
CAP
C=1000 pF
CAP
C=1e7 pF
CAP
C=10 pF
CAP
C=1000 pF
CAP
C=1000 pF
IND
L=470 nH
RES
R=2700 Ohm
CAP
C=68 pF
IND
L=56 nH
IND
L=33 nH
RES
R=3.9 Ohm
SUBCKT
ID=U1
NET="AH114"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vcc = +5 V
40
50
60
70
80
90
100
Frequency (MHz)
Measured Gain
20
22
24
26
Ga
in
(d
B
)
DB(|S[2,1]|)
40
50
60
70
80
90
100
Frequency (MHz)
Measured Return Loss
-25
-20
-15
-10
-5
0
R
e
tu
rn
L
o
ss
(d
B
)
DB(|S[1,1]|)
DB(|S[2,2]|)
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