参数资料
型号: AH115-S8
元件分类: 放大器
英文描述: 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封装: PLASTIC, SMT, MS-012, SOIC-8
文件页数: 5/7页
文件大小: 638K
代理商: AH115-S8
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 5 of 7
October 2005
AH115 / ECP050G
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
AH115-S8 (SOIC-8 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Land Pattern
Thermal Specifications
Parameter
Rating
Operating Case Temperature
(1)
-40 to +85
°C
Thermal Resistance
(2), Rth
62
°C / W
Junction Temperature
(3), Tjc
162
°C
Notes:
1. The amplifier can be operated at 105
°C case temperature for up to 1000
hours over its lifetime without degradation in performance and will not
degrade device operation at the recommended maximum 85
°C case
temperature for the rest of its lifetime.
2. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85
°C. Tjc is a function of the voltage at pins 6 and 7 and the
current applied to pins 6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
3. This corresponds to the typical biasing condition of +5V, 250 mA at an 85
°C
case temperature. A minimum MTTF of 1 million hours is achieved for
junction temperatures below 247
°C.
Product Marking
The component will be marked with an
“AH115-S8” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Class 1B
Value:
Passes
500V to <1000V
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235
° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink.
Ensure that the ground / thermal via region
contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board
material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches).
Angles are in
degrees.
MTTF vs. GND Tab Temperature
100
1000
10000
100000
60
70
80
90
100
110
120
Tab Temperature (°C)
MT
T
F
(m
ill
io
n
h
rs
)
相关PDF资料
PDF描述
AH115 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH115 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
AH116-S8G 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH116-S8G 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AH116-S8 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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