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参数资料
| 型号： | AH115 |
| 元件分类： | 放大器 |
| 英文描述： | 1800 MHz - 2300 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | SMT, SOIC-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 127K |
| 代理商： | AH115 |
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc.
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
April 2003
The Communications Edge
TM
AH115
Watt, High Gain HBT Amplifier
Preliminary Data Sheet
Product Features
1800 – 2300 MHz
+28 dBm P1dB
+43 dBm Output IP3
14 dB Gain @ 1960 MHz
Single Positive Supply (+5 V)
MTTF >100 Years
SOIC-8 SMT Package
Product Description
The AH115 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance over a broad
frequency range with +43 dBm OIP3 and +28 dBm of
compressed 1-dB power and is housed in an industry
standard SOIC-8 SMT package. All devices are 100%
RF and DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 to maintain high linearity over temperature and
operate directly off a +5 V supply.
This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Function
Pin No.
Vref
1
Input / Base
3
Output / Collector
6, 7
Vbias
8
GND
Slug
N/C or GND
2, 4, 5
Target Specifications
Parameters
Units
Min
Typ
Max
Frequency Range
MHz
1800
2140
2300
S21 - Gain
dB
12.5
14
S11 - Input R.L.
dB
-15
S22 - Output R.L.
dB
-8
Output P1dB
dBm
+28
Output IP3
2
dBm
+42
Noise Figure
dB
6.5
IS-95 Channel Power
@ -65 dBc ACPR, 1960MHz
dBm
+16
WCDMA Channel Power
@ -55 dBc, 2140 MHz, 64 DPCH
dBm
+16
Operating Current Range
mA
200
250
300
Device Voltage
V
5
Test conditions unless otherwise noted.
1. T = 25C, Vsupply = +5 V, Frequency = 2140 MHz, in recommended application circuit..
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Specifications
Parameters
Units
Typical
Frequency
MHz
1960
2140
S21 - Gain
dB
15
14
S11 - Input R.L.
dB
-12
-15
S22 - Output R.L.
dB
-8
Output P1dB
dBm
+28
Output IP3
2
dBm
+43
+42
Noise Figure
dB
5.0
6.5
Supply Bias
+5 V @ 250 mA
Typical parameters reflect performance in recommended application circuit:
Supply Voltage = +5 V, I = 250 mA,
+25
° C.
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
RF Input Power (continuous)
+22 dBm
AH115
Watt, High Linearity HBT Amplifier
dc Voltage / Current
+8 V / 400 mA
(Available in Tape & Reel)
dc Power
2W
AH115-
PCB1960
Fully assembled evaluation circuit, 1960 MHz
Operation of this device above any of these parameters may cause permanent damage
1
2
3
4
8
7
6
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AH1157 | 制造商:FARADAY 制造商全称:FARADAY 功能描述:ACTIVE GROUP DELAY CORRECTOR NETWORK |
| AH115-S8 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:1/2 Watt, High Linearity InGaP HBT Amplifier |
| AH115-S8G | 功能描述:射频放大器 1800-2300MHz 14dB Gain@1960MHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AH115-S8-G | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER 制造商:TriQuint Semiconductor 功能描述:RF Amp Chip Single GP 2.3GHz 8-Pin SOIC |
| AH115-S8PCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 14.4dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
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