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| 型号： | ALD1117SAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 13.2V 2MA 8SOIC |
| 产品目录绘图： | 8-Pin SOIC Package |
| 标准包装： | 50 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 13.2V |
| 电流 - 连续漏极(Id) @ 25° C： | 2mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1800 欧姆 @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 其它名称： | 1014-1049 |
A DVANCED
L INEAR
D EVICES, I NC.
ALD1107/ALD1117
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
APPLICATIONS
The ALD1107/ALD1117 are monolithic quad/dual P-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1107/ALD1117 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for precision analog switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. These
MOSFET devices feature very large (almost infinite) current gain in a low
frequency, or near DC, operating environment. The ALD1107/ALD1117
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Precision current mirrors
Precision current sources
Voltage choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog signal processing
are building blocks for differential amplifier input stages, transmission
gates, and multiplexer applications, current sources and many precision
analog circuits.
PIN CONFIGURATION
ALD1117
FEATURES
? Low threshold voltage of -0.7V
DP1
GP1
1
2
8
7
DP2
GP2
? Low input capacitance
? Low Vos 2mV typical
? High input impedance -- 10 14 ? typical
? Negative current (I DS ) temperature coefficient
? Enhancement-mode (normally off)
? DC current gain 10 9
? Low input and output leakage currents
SP1
V -
3
4
TOP VIEW
SAL, PAL, DA PACKAGES
6
5
SP2
V +
? RoHS compliant
ALD1107
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
DP1
1
14
DP2
0 ° C to +70 ° C
Operating Temperature Range*
0 ° C to +70 ° C -55 ° C to +125 ° C
GP1
SP1
2
3
13
12
GP2
SP2
8-Pin SOIC
Package
ALD1117SAL
14-Pin SOIC
Package
8-Pin Plastic Dip
Package
ALD1117PAL
14-Pin Plastic Dip
Package
8-Pin CERDIP
Package
ALD1117DA
14-Pin CERDIP
Package
V -
DP4
GP4
SP4
4
5
6
7
11
10
9
8
V +
DP3
GP3
SP3
ALD1107SBL
ALD1107PBL
ALD1107DB
TOP VIEW
SBL, PBL, DB PACKAGES
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
ALD1107
V- (4)
BLOCK DIAGRAM
ALD1117
V - (4)
G P1 (2)
D P1 (1)
D P2 (14)
G P2 (13)
~
G P3 (9)
D P3 (10)
D P4 (5)
G P4 (6)
G P1 (2)
D P1 (1)
~
D P2 (8)
G P2 (7)
S P1 (3)
V+ (11)
S P2 (12)
S P3 (8)
V+ (11)
S P4 (7)
S P1 (3)
V+ (5)
S P2 (6)
Rev 2.0 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD111910MAL | 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD111910PAL | 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD111910SAL | 功能描述:MOSFET Dual N-Ch FET EPAD Matched Pair Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD111933 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD111933MAL | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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