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| 型号： | ALD114904ASAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 10.6V DUAL 8SOIC |
| 产品目录绘图： | 8-Pin SOIC Package |
| 标准包装： | 50 |
| 系列： | EPAD® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 耗尽模式 |
| 漏极至源极电压(Vdss)： | 10.6V |
| 电流 - 连续漏极(Id) @ 25° C： | 12mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 3.6V |
| Id 时的 Vgs(th)（最大）： | 380mV @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 其它名称： | 1014-1062 |
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A DVANCED
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D EVICES, I NC.
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EPAD
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AB
E N
ALD114804/ALD114804A/ALD114904/ALD114904A
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD?
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= -0.40V
GENERAL DESCRIPTION
ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic
quad/dual depletion mode N-Channel MOSFETS matched at the factory using
ALD’s proven EPAD? CMOS technology. These devices are intended for low
voltage, small signal applications. They are excellent functional replacements for
normally-closed relay applications, as they are normally on (conducting) without
any power applied, but could be turned off or modulated when system power
supply is turned on. These MOSFETS have the unique characteristics of, when
the gate is grounded, operating in the resistance mode for low drain voltage lev-
els and in the current source mode for higher voltage levels and providing a
constant drain current.
ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for
exceptional device electrical characteristics matching. As these devices are on
the same monolithic chip, they also exhibit excellent temperature tracking char-
acteristics. They are versatile as design components for a broad range of analog
applications, such as basic building blocks for current sources, differential ampli-
fier input stages, transmission gates, and multiplexer applications.
Besides matched pair electrical characteristics, each individual MOSFET also
exhibits well controlled parameters, enabling the user to depend on tight design
limits corresponding to well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are suitable for switching and amplifying applica-
tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems
where low input bias current, low input capacitance and fast switching speed are
desired. These devices exhibit well controlled turn-off and sub-threshold
charactersitics and therefore can be used in designs that depend on sub-thresh-
old characteristics.
APPLICATIONS
? Functional replacement of Form B (NC) relays
? Ultra low power (nanowatt) analog and digital
circuits
? Ultra low operating voltage (<0.2V) analog and
digital circuits
? Sub-threshold biased and operated circuits
? Zero power fail safe circuits in alarm systems
? Backup battery circuits
? Power failure and fail safe detector
? Source followers and high impedance buffers
? Precision current mirrors and current sources
? Capacitives probes and sensor interfaces
? Charge detectors and charge integrators
? Differential amplifier input stage
? High side switches
? Peak detectors and level shifters
? Sample and Hold
? Current multipliers
? Discrete analog switches and multiplexers
? Discrete voltage comparators
PIN CONFIGURATIONS
ALD114804
The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in
IC*
1
V -
V -
16
IC*
precision applications which require very high current gain, beta, such as current
mirrors and current sources. A sample calculation of the DC current gain at a
G N1
2
15
G N2
drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is
recommended that the user, for most applications, connect the V+ pin to the
most positive voltage and the V- and IC pins to the most negative voltage in the
system. All other pins must have voltages within these voltage limits at all times.
D N1
S 12
V -
3
4
5
V -
M1
M2
V +
14
13
12
D N2
V +
S 34
FEATURES
? Depletion mode (normally ON)
? Precision Gate Threshold Voltages: -0.40V +/- 0.02V
? Nominal R DS(ON) @V GS =0.0V of 5.4K ?
? Matched MOSFET to MOSFET characteristics
D N4
G N4
IC*
6
7
8
V -
M4
M3
V -
11
10
9
D N3
G N3
IC*
? Tight lot to lot parametric control
? Low input capacitance
? V GS(th) match (V OS ) — 20mV
? High input impedance — 10 12 ? typical
SCL, PCL PACKAGES
ALD114904
? Positive, zero, and negative V GS(th) temperature coefficient
? DC current gain >10 8
? Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0 ° C to +70 ° C 0 ° C to +70 ° C
IC*
G N1
D N1
S 12
1
2
3
4
V -
M1
M2
V-
V -
8
7
6
5
IC*
G N2
D N2
V-
16-Pin 16-Pin 8-Pin 8-Pin
SOIC Plastic Dip SOIC Plastic Dip
Package Package Package Package
ALD114804ASCL ALD114804APCL ALD114904ASAL ALD114904APAL
SAL, PAL PACKAGES
*IC pins are internally connected,
connect to V-
ALD114804SCL ALD114804PCL ALD114904SAL ALD114904PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 2.1 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD114904PA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD114904PAL | 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD114904SA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD114904SAL | 功能描述:MOSFET Dual EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD114913 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS |
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