参数资料
型号: AM0912-150
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封装: 0.400 X 0.500 INCH, HERMETIC SEALED, METAL CERAMIC, S038, BIGPAC-2
文件页数: 1/6页
文件大小: 191K
代理商: AM0912-150
September 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 150 W MIN. WITH 7.5 dB GAIN
.
BANDWIDTH
= 255MHz
DESCRIPTION
The AM0912-150 is designed for specialized
avionics applications including Mode-S, TCAS and
JTIDS, where power is provided under pulse for-
mats utilizing short pulse widths and high burst
or overall duty cycles.
The AM0912-150 is housed in the unique BIG-
PAC Hermetic Metal/Ceramic package with in-
ternal Input/Output matching structures.
PIN CONNECTION
BRANDING
0912-150
ORDER CODE
AM0912-150
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 100C)
300
W
IC
Device Current*
16.5
A
VCC
Collector-Supply Voltage*
35
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.57
°C/W
*Applies only to rated RF amplifier operation
AM0912-150
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6
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