参数资料
型号: AM29DS163DB100WAKN
厂商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 16兆位的CMOS 1.8伏只,同时作业快闪记忆体
文件页数: 20/50页
文件大小: 1682K
代理商: AM29DS163DB100WAKN
20
Am29DS163D
A D V A N C E I N F O R M A T I O N
during V
CC
power-up and power-down transitions, or
from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to reading array data. Subse-
quent writes are ignored until V
CC
is greater than V
LKO
.
The system must provide the proper signals to the
control pins to prevent unintentional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to reading array data on power-up.
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the sys-
tem writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The sys-
tem can read CFI information at the addresses given
in
Table 10 on page 20
to
Table 13 on page 22
. To ter-
minate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in
Table 10 on
page 20
to
Table 13 on page 22
. The system must
write the reset command to return the device to the
autoselect mode.
For further information, please refer to the CFI Specifi-
cation and CFI Publication 100, available via the
World Wide Web at http://www.amd.com/prod-
ucts/nvd/overview/cfi.html. Alternatively, contact an
AMD representative for copies of these documents.
Table 10. CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
相关PDF资料
PDF描述
Am29DS163DB120 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB120WAE 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB120WAEN 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB120WAF 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB120WAFN 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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