参数资料
型号: AM29DS163DB100WAKN
厂商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 16兆位的CMOS 1.8伏只,同时作业快闪记忆体
文件页数: 29/50页
文件大小: 1682K
代理商: AM29DS163DB100WAKN
Am29DS163D
29
A D V A N C E I N F O R M A T I O N
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
.
If the output is low (Busy), the device is actively eras-
ing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is reading array data, the standby
mode, or one of the banks is in the erase-sus-
pend-read mode.
Table 15 on page 31
shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or com-
plete, or whether the device enters the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase op-
eration), and during the sector erase time-out.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 tog-
gles for approximately 100 μs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Sus-
pend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data#
Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1
μ
s after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
Table 15 on page 31
shows the outputs for Toggle Bit I
on DQ6.
Figure 6
shows the toggle bit algorithm.
Fig-
ure 22, on page 43
shows the toggle bit timing
diagrams.
Figure 23, on page 43
shows the differ-
ences between DQ2 and DQ6 in graphical form. See
also the subsection on
“DQ2: Toggle Bit II” on
page 30
.
Figure 6. Toggle Bit Algorithm
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle
Read DQ7–DQ0
Twice
Read DQ7–DQ0
Note:
The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
相关PDF资料
PDF描述
Am29DS163DB120 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB120WAE 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB120WAEN 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB120WAF 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS163DB120WAFN 16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
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