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参数资料
| 型号： | AM29F017D-150F4E |
| 厂商： | SPANSION LLC |
| 元件分类： | DRAM |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 2M X 8 FLASH 5V PROM, 150 ns, PDSO40 |
| 封装： | MO-142CD, TSOP-40 |
| 文件页数： | 3/44页 |
| 文件大小： | 1021K |
| 代理商： | AM29F017D-150F4E |
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Am29F017D
GENERAL DESCRIPTION
The Am29F017D is a 16 Mbit, 5.0 volt-only Flash mem-
ory organized as 2,097,152 bytes. The 8 bits of data
appear on DQ0–DQ7. The Am29F017D is offered in a
40-pin or 48-pin TSOP package. This device is de-
signed to be programmed in-system with the standard
system 5.0 volt V
CC
supply. A 12.0 volt V
PP
is not re-
quired for program or erase operations. The device can
also be programmed in standard EPROM program-
mers.
This device is manufactured using AMD’s 0.23
μ
m
process technology, and offers all the features and ben-
efits of the
0.32 μm Am29F017B and the 0.5 μm
Am29F016C.
The standard device offers access times of 70, 90, 120,
and 150 ns, allowing high-speed microprocessors to
operate without wait states. To eliminate bus conten-
tion, the device has separate chip enable (CE#), write
enable (WE#), and output enable (OE#) controls.
The device requires only a
single 5.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard
. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits
. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The
hardware sector
protection
feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the
standby
mode
. Power consumption is greatly reduced in
this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F017D-150F4I | CAT 5E PATCH CORD, BLACK 7 FT. |
| AM29F017D-150FC | CAT 5E PATCH CORD, BLACK 10FT |
| AM29F017D-90E4C | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017D-90E4I | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017D-70 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F017D-70FI | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 70NS 48TSOP - Trays |
| am29f017d-90fc/t | 制造商:Advanced Micro Devices 功能描述: |
| AM29F032B-120ED | 制造商:Spansion 功能描述: |
| AM29F032B75ED | 制造商:Advanced Micro Devices 功能描述: |
| AM29F032B-75EF | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:32M (4M X 8-BIT) 5V FLSH SCTR 制造商:Spansion 功能描述:IC, FLASH MEM, 32MBIT, 75NS, 40-TSOP, Memory Type:Flash - NOR, Memory Size:32Mbi |
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