- 您现在的位置：买卖IC网 > PDF目录166214 > AM29F200BT-90ED (SPANSION LLC) Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes PDF资料下载
参数资料
| 型号： | AM29F200BT-90ED |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| 中文描述： | 128K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件页数： | 31/41页 |
| 文件大小： | 818K |
| 代理商： | AM29F200BT-90ED |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页当前第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页
March 3, 2009 21526D5
Am29F200B
35
D A TA
SH EE T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25×C, 5.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V (VCC = 4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Limits
Comments
Typ (Note 1)
Max (Note 2)
Unit
Sector Erase Time
1
8
sec
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
5
sec
Byte Programming Time
7
300
s
Excludes system-level overhead
(Note 5)
Word Programming Time
12
500
s
Chip Programming Time (Note 3)
1.8
5.4
sec
Parameter Description
Min
Max
Input Voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
10
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C
10
Years
125
°C
20
Years
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F200BT-90EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes |
| AM29F200BB-90DTI1 | 128K X 16 FLASH 5V PROM, 90 ns, UUC42 |
| AM29F200BB-75DPC1 | 128K X 16 FLASH 5V PROM, 70 ns, UUC42 |
| AM29F200T-90FD | 256K X 8 FLASH 5V PROM, 90 ns, PDSO48 |
| AM29F200T-150FE | 256K X 8 FLASH 5V PROM, 150 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F200BT-90SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BT-90SI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 90ns 44-Pin SO |
| AM29F200BT-90SI\\T | 制造商:Spansion 功能描述:AM29F200BT-90SI\\T - Tape and Reel |
| AM29F200BT-90SI\T | 制造商:Spansion 功能描述:AM29F200BT-90SI\T - Tape and Reel |
| AM29F400AB-120DGC1 | 制造商:Spansion 功能描述:4M FLASH KNOWN GOOD DIE W/ TOP BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
发布紧急采购，3分钟左右您将得到回复。