参数资料
型号: AM29F200BT-90ED
厂商: SPANSION LLC
元件分类: PROM
英文描述: Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述: 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
封装: LEAD FREE, MO-142DD, TSOP-48
文件页数: 9/41页
文件大小: 818K
代理商: AM29F200BT-90ED
March 3, 2009 21526D5
Am29F200B
15
D A TA
SH EE T
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 3.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相关PDF资料
PDF描述
AM29F200BT-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-90DTI1 128K X 16 FLASH 5V PROM, 90 ns, UUC42
AM29F200BB-75DPC1 128K X 16 FLASH 5V PROM, 70 ns, UUC42
AM29F200T-90FD 256K X 8 FLASH 5V PROM, 90 ns, PDSO48
AM29F200T-150FE 256K X 8 FLASH 5V PROM, 150 ns, PDSO48
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