收藏本站
参数资料
型号： Am29F400BT-90SIB
厂商： Advanced Micro Devices, Inc.
英文描述： 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512亩x 8-Bit/256亩x 16位），5.0伏的CMOS只引导扇区闪存
文件页数： 37/37页
文件大小： 238K
代理商： AM29F400BT-90SIB
Am29F400B
37
P R E L I M I N A R Y
REVISION SUMMARY
Revision B
Global
Added -55 and -60 speed options, deleted -65 speed
option. Changed data sheet designation from Advance
Information to Preliminary.
Connection Diagrams
Corrected pinouts on all packages: deleted A18.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 μs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 μs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 μs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V
ID
min and max values are 11.5
to 12.5 V, with a V
CC
test condition of 5.0 V. Revised I
LIT
to 50 μA. Added I
CC4
specification. Added typical
values to TTL/NMOS table. Revised CMOS typical
standby current (I
CC3
).
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms.
AC Characteristics, Erase/Program Operations
Corrected t
AH
specification for -90 speed option to 45
ns.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
AC Characteristics
Changed t
DF
and T
FLQZ
to 15 ns for -55 speed option.
Revision C+1
Table 2, Top Boot Block Sector Address Table
Corrected the sector size for SA10 to 16 Kbytes/8
Kwords.
DC Characteristics—TTL/NMOS Compatible
Deleted Note 4.
Revision C+2
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
AC Characteristics
Word/Byte Configuration: Changed t
FHQV
specification
for 55 ns device.
Erase/Program Operations: Changed t
WHWH1
word
mode specification to 12 μs. Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Changed t
DS
and t
CP
specifications for 55 ns device.
Alternate CE# Controlled Erase/Program Operations:
Changed t
WHWH1
word mode specification to 12 μs.
Corrected the notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested.
Changed t
DS
and t
CP
specifications for 55 ns device.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash
is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料
PDF描述
AM29F400BT-90SC0 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BT-90EC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BT-90EC0 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BT-90ED 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BT-90ED0 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
相关代理商/技术参数
参数描述
AM29F800BB-120DPC1 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film
AM29F800BB120SC 制造商:Advanced Micro Devices 功能描述:
AM29F800BB-55EC 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP
AM29F800BB-55EF 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AM29F800BB-55EF\\T 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*