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| 型号： | AM29F800B-120FE |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 120 ns, PDSO48 |
| 封装： | REVERSE, TSOP-48 |
| 文件页数： | 15/41页 |
| 文件大小： | 267K |
| 代理商： | AM29F800B-120FE |
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8/18/97
Am29F800T/Am29F800B
15
P R E L I M I N A R Y
Sector Erase
Sector erase is a six bus cycle operation. There are two
“unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are
then followed by the sector erase command. The sec-
tor address (any address location within the desired
sector) is latched on the falling edge of WE, while the
command (30H) is latched on the rising edge of WE.
After a time-out of 80
μ
s from the rising edge of the
last sector erase command, the sector erase operation
will begin.
Multiple sectors may be erased sequentially by writing
the six bus cycle operations as described above. This
sequence is followed with writes of the Sector Erase
command to addresses in other sectors desired to be
sequentially erased. The time between writes must be
less than 80
μ
s otherwise that command will not be ac-
cepted and erasure will start. It is recommended that
processor interrupts be disabled during this time to
guarantee this condition. The interrupts can be re-en-
abled after the last Sector Erase command is written. A
time-out of 80
μ
s from the rising edge of the last WE will
initiate the execution of the Sector Erase command(s).
If another falling edge of the WE occurs within the 80
μ
s time-out window the timer is reset. (Monitor DQ3 to
determine if the sector erase timer window is still open.
See DQ3, Sector Erase Timer.) Any command other
than Sector Erase or Erase Suspend during this period
will reset the device to the read mode, ignoring the pre-
vious command string. In that case, restart the erase
on those sectors and allow them to complete.
Loading the sector erase buffer may be done in
any sequence and with any number of sectors (0 to18).
Refer to DQ3, Sector Erase Timer, in the Write Opera-
tion Status section.
Sector erase does not require the user to program the
device prior to erase. The device automatically pro-
grams all memory locations in the sector(s) to be
erased prior to electrical erase. When erasing a sector
or sectors the remaining unselected sectors are not af-
fected. The system is not required to provide any con-
trols or timings during these operations.
The automatic sector erase begins after the 80
μ
s time
out from the rising edge of the WE pulse for the last
sector erase command pulse and terminates when the
data on DQ7, Data Polling, is “1” (see Write Operation
Status section) at which time the device returns to the
read mode. Data Polling must be performed at an ad-
dress within any of the sectors being erased.
Figure 2 illustrates the Embedded Erase Algorithm
using typical command strings and bus operations.
Erase Suspend
The Erase Suspend command allows the user to inter-
rupt a Sector Erase operation and then perform data
reads or programs to a sector not being erased. This
command is applicable ONLY during the Sector Erase
operation which includes the time-out period for sector
erase. The Erase Suspend command will be ignored if
written during the Chip Erase operation or Embedded
Program Algorithm. Writing the Erase Suspend com-
mand during the Sector Erase time-out results in imme-
diate termination of the time-out period and suspension
of the erase operation.
Any other command written during the Erase Suspend
mode will be ignored except the Erase
Resume command. Writing the Erase Resume com-
mand resumes the erase operation. The addresses are
“don’t-cares” when writing the Erase Suspend or Erase
Resume command.
When the Erase Suspend command is written during a
Sector Erase operation, the chip will take a maximum
of 20
μ
s to suspend the operation and go into erase
suspended mode, at which time the user can read or
program from a sector that is not being erased. Read-
ing data in this mode is the same as reading from the
standard read mode, except that the data must be read
from sectors that have not been erase suspended.
Successively reading from the erase-suspended sec-
tor while the device is in the erase-suspend-read mode
will cause DQ2 to toggle. After entering the erase-sus-
pend mode, the user can program the device by writing
the appropriate command sequence for Byte Program.
This program mode is known as the erase sus-
pend-program mode. Again, programming in this mode
is the same as programming in regular Byte Program
mode, except that the data must be programmed to
sectors that are not erase suspended. Successively
reading from the erase suspended sector while the de-
vice is in the erase suspend-program mode will cause
DQ2 to toggle. The end of the erase suspend-program
operation is detected by the RY/BY output pin, DATA
Polling of DQ7, or by the Toggle Bit (DQ6), which is the
same as the regular Byte Program operation. Note that
DQ7 must be read from the Byte Program address
while DQ6 can be read from any address.
When the erase operation has been suspended, the de-
vice defaults to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the stan-
dard read mode except that the data must be read from
sectors that have not been erase-suspended.
To resume the operation of Sector Erase, the Resume
command (30H) should be written. Any further writes of
the Resume command at this point will be ignored. An-
other Erase Suspend command can be written after the
chip has resumed erasing.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F800B-120 | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-120EC | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-120ECB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FCB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-70FE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F800BB-55EC | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 8Mbit 1M/512K x 8bit/16bit 55ns 48-Pin TSOP |
| AM29F800BB-55EF | 功能描述:闪存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AM29F800BB-55EF\\T | 制造商:Spansion 功能描述:IC 8MEG(512K16)BOTTOM SCTOR 100K (CS39S) |
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